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Showing 113–128 of 249 results
Mechanically Exfoliated ReS₂ FET Device ReS₂ FET (Back-Gated ReS₂ FET) Device Structure: Au Electrodes / ReS₂ / 300 nm SiO₂ / Si Back-Gated FET Device Specifications: Channel Width: 5 µm Few-layer (~5 layers) Multilayer (~10 layers) For specific thickness requirements, please contact us. Device Description & Features: Anisotropic 2D Semiconductor: Rhenium disulfide (ReS₂) is a…
Mechanically Exfoliated ReSe₂ FET Device ReSe₂ FET (Back-Gated ReSe₂ FET) Device Structure: Au Electrodes / ReSe₂ / 300 nm SiO₂ / Si Back-Gated FET ReSe₂ Layer Options: Few-layer (~5 layers) Multilayer (~10 layers) For specific thickness requirements, please contact us. Device Description & Features: Anisotropic 2D Semiconductor: Rhenium diselenide (ReSe₂) is a layered transition metal…
Mechanically Exfoliated WS₂ FET Device WS₂ FET (Back-Gated WS₂ FET) Device Structure: Au Electrodes / WS₂ / 300 nm SiO₂ / Si Back-Gated FET WS₂ Layer Options: Monolayer Few-layer ( ~5 layers) Multilayer (~10 layers) For specific thickness requirements, please contact us. Device Description & Features: High-Performance 2D Semiconductor: Tungsten disulfide (WS₂) is a layered…
MnBi₂Se₄ Crystals MnBi₂Se₄ is a layered magnetic topological insulator with a van der Waals structure, known for its intriguing combination of magnetic order and topological surface states. It exhibits unique properties such as strong spin-orbit coupling, robust magnetic interactions, and high environmental stability, making it a promising material for quantum materials research, spintronics, and magneto-optical…
MnBi₄Se₇ Crystals MnBi₄Se₇ is a layered magnetic topological material with a van der Waals structure, combining robust topological surface states with intrinsic magnetic ordering introduced by manganese. This unique combination makes it a promising candidate for quantum materials research, spintronics, and studies of topological quantum effects such as the quantum anomalous Hall effect. Sample Size…
MnBi₄Te₇ Crystals MnBi₄Te₇ is a layered magnetic topological material with a van der Waals structure, combining intrinsic magnetic properties with robust topological surface states. It is a promising material for spintronics, quantum materials research, and advanced condensed matter studies. MnBi₄Te₇ has attracted significant attention for its potential to exhibit exotic quantum phenomena, such as the…
MnPS₃ Crystals MnPS₃ is a layered magnetic semiconductor with a van der Waals structure, exhibiting antiferromagnetic ordering and strong anisotropic properties. It is an excellent material for studying low-dimensional magnetism, spintronics, and 2D material applications. Our MnPS₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and superior crystallinity….
MnPSe₃ Crystals MnPSe₃ is a layered antiferromagnetic semiconductor with a van der Waals structure, known for its strong in-plane magnetic anisotropy and excellent semiconducting properties. It exhibits Néel-type antiferromagnetic ordering, making it an ideal material for spintronics, quantum magnetism studies, and 2D material research. Our MnPSe₃ crystals are synthesized using the Chemical Vapor Transport (CVT)…
MnSb₂Te₄ Crystals MnSb₂Te₄ is a layered magnetic topological insulator with a van der Waals structure, exhibiting a unique combination of magnetic order and robust topological surface states. It is recognized for its potential in exploring quantum phenomena, spintronics, and advanced magneto-electronic applications. Our MnSb₂Te₄ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring…
Mo-Doped WSe₂ Crystals (25% Molybdenum Doping) Mo-doped WSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure, combining the intrinsic properties of WSe₂ with enhanced functionality from molybdenum doping. The 25% Mo doping introduces bandgap tunability, improved charge carrier dynamics, and unique optical and electronic properties, making it ideal for applications…
Mo₀.₇₅W₀.₂₅Se₂ Crystals Mo₀.₇₅W₀.₂₅Se₂ is a layered transition metal dichalcogenide (TMDC) alloy with a van der Waals structure. The alloying of molybdenum and tungsten in a 3:1 ratio enables tunable electronic, optical, and catalytic properties, making it highly valuable for advanced research in optoelectronics, quantum materials, and energy applications. Sample Size Options: Crystals larger than 10…
Mo₀.₉₅W₀.₀₅Se₂ Crystals Mo₀.₉₅W₀.₀₅Se₂ is a layered transition metal dichalcogenide (TMDC) alloy with a van der Waals structure. The substitutional doping of molybdenum with tungsten provides precise control over the bandgap and electronic properties, making it a versatile material for optoelectronics, quantum research, and energy-related applications. Sample Size Options: Crystals larger than 10 mm² Material Properties:…
Molybdenum Diselenide (MoSe₂) CAS Number: 12058-18-3 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: MoSe₂ films, in either monolayer or few-layer forms, are directly grown on sapphire wafers. Custom transfer to other substrates is available-please visit our Custom Products page or contact us directly for further assistance. Fundamental…
Molybdenum Diselenide (MoSe₂) on 2-Inch Sapphire Wafer CAS Number: 12058-18-3 Substrate Size: 2-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: MoSe₂ films, in either monolayer or few-layer forms, are directly grown on sapphire wafers. Custom transfer to other substrates is available-please visit our Custom Products page or contact us directly for further…
Molybdenum Disulfide (MoS₂) CAS Number: 1317-33-5 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: MoS₂ films are directly grown on SiO₂/Si or sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Undoped molybdenum disulfide…
Molybdenum Disulfide (MoS₂) Film on 2-Inch Sapphire Wafer CAS Number: 1317-33-5 Substrate Size: 2-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: Monolayer or few-layer MoS₂ films are directly grown on 2-inch sapphire wafers. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance….
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