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Showing 129–144 of 249 results
Molybdenum Disulfide (MoS₂) Film on 4-Inch Sapphire Wafer CAS Number: 1317-33-5 Substrate Size: 4-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: Monolayer or few-layer MoS₂ films are directly grown on 4-inch sapphire wafers. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance….
Molybdenum Ditelluride (MoTe₂) CAS Number: 12058-20-7 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Morphology Options: Few Layers (~5 layers) Multiple Layers (~10 layers) Phase Options: 2H 1T’ Substrate Options: MoTe₂ films can be directly grown on SiO₂ or sapphire substrates. Custom transfer to other substrates is available upon request-please…
Monolayer 2H-MoTe₂ FET Device Device Structure: Conductive Si Substrate / 300 nm SiO₂ Layer / 5 µm Gold Electrode Array / Monolayer 2H-MoTe₂ Device Description & Features: High-Performance 2D Semiconductor: Molybdenum ditelluride (MoTe₂) in its 2H phase is a layered transition metal dichalcogenide (TMD) with a direct bandgap (~1.1 eV in monolayer form), making it…
MoS₂ Crystals MoS₂ is a layered transition metal dichalcogenide (TMD) known for its notable electronic, optical, and catalytic properties. It features a tunable bandgap that transitions from an indirect (~1.2 eV) in bulk to a direct bandgap (~1.8 eV) in monolayer form, making it ideal for applications in optoelectronics, nanoelectronics, and energy conversion. Our medium-area…
MoS₂ FET Device Device Structure: Conductive Si Substrate / 300 nm SiO₂ Layer / Few-layer or Multilayer MoS₂ / Au+Cr+Au Electrodes MoS₂ Layer Options: Few-layer (~5 layers) or Multilayer (~10 layers) Custom Layer Thickness Available – Please Contact Us Device Description & Features: High-Performance 2D Semiconductor: Molybdenum disulfide (MoS₂) is a layered transition metal dichalcogenide…
MoSe₂ Crystals MoSe₂ (Molybdenum Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure. It exhibits a tunable bandgap, strong spin-orbit coupling, and excellent electronic and optoelectronic properties, making it highly suitable for applications in nanoelectronics, optoelectronics, spintronics, and 2D material research. Our MoSe₂ crystals are synthesized using the Chemical Vapor…
MoSSe Crystals MoSSe is a Janus-type layered transition metal dichalcogenide (TMD) with asymmetric sulfur and selenium layers, leading to unique physical and chemical properties. Its broken out-of-plane symmetry results in a built-in dipole moment, enhancing piezoelectric, optoelectronic, and catalytic performance. MoSSe is widely studied for applications in 2D materials, quantum devices, and energy conversion technologies….
MoTe₂ Crystals MoTe₂ (1T’ phase) is a layered transition metal dichalcogenide (TMD) known for its intriguing electronic and topological properties. The 1T’ phase exhibits a semimetallic nature with strong spin-orbit coupling, making it a promising material for topological insulators, quantum spin Hall effect studies, and next-generation electronic devices. Our MoTe₂ (1T’) crystals are synthesized using…
MoTe₂ Crystals MoTe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure, known for its semiconducting 2H phase. With a tunable bandgap and excellent electronic and optical properties, MoTe₂ is a promising material for optoelectronics, photonics, and 2D material research. Sample Size Options: Crystals larger than 10 mm² Crystals larger than…
MoVSe₄ Crystals MoVSe₄ is a layered transition metal chalcogenide with a van der Waals structure. The incorporation of vanadium into the MoSe₂ framework introduces unique electronic, optical, and catalytic properties, including enhanced magnetic and electronic behavior. This makes MoVSe₄ an excellent material for spintronics, quantum research, and energy-related applications. Sample Size Options: Crystals larger than…
MoWS₄ Crystals MoWS₄ is a layered transition metal chalcogenide alloy that combines the properties of both MoS₂ and WS₂. This mixed-metal sulfide exhibits tunable electronic, optical, and catalytic properties, depending on the Mo:W ratio, making it highly suitable for applications in nanoelectronics, optoelectronics, energy storage, and catalysis. Our MoWS₄ crystals are synthesized using the Chemical…
MoWSe₄ Crystals MoWSe₄ (Molybdenum Tungsten Tetraselenide) Crystals MoWSe₄ (Molybdenum Tungsten Tetraselenide) is a layered transition metal chalcogenide alloy that combines the unique electronic, optical, and catalytic properties of both MoSe₂ and WSe₂. This mixed-metal selenide exhibits tunable bandgap characteristics, high carrier mobility, and excellent thermal stability, making it suitable for applications in nanoelectronics, optoelectronics, energy…
Multilayer Graphene Grown on Ni Foils (5 cm x 10 cm) CAS Number: 7782-42-5 Substrate Size: 5 cm x 10 cm Preparation Method: Chemical Vapor Deposition (CVD) Morphology Options: Continuous Multilayer Film Please contact us directly for specific thickness requirements. Substrate Options: Multilayer graphene films are directly grown on nickel foils. Custom transfer to other…
Multilayer ReS₂/PdSe₂ FET Device Device Structure: Conductive Si Substrate / 285 nm SiO₂ / Au Electrodes / Exfoliated Multilayer PdSe₂ / Exfoliated Multilayer ReS₂ Material Specifications: Multilayer PdSe₂ Multilayer ReS₂ For specific thickness requirements, please contact us. Device Description & Features: Heterostructure 2D FET: The combination of PdSe₂ and ReS₂ forms a unique type-II van…
Nb-Doped MoSe₂ Crystals Nb-doped MoSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure. Niobium doping introduces p-type conductivity, modifies the electronic band structure, and enhances the material’s optoelectronic and catalytic properties. These features make Nb-doped MoSe₂ an excellent candidate for spintronics, energy storage, and optoelectronic devices. Sample Size Options: Crystals…
Nb-Doped WSe₂ Crystals Nb-doped WSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure. Niobium doping introduces p-type conductivity and significantly modifies the electronic and optical properties of WSe₂, making it highly suitable for applications in optoelectronics, spintronics, and energy-related technologies. Sample Size Options: Crystals larger than 10 mm² Crystals larger…
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