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Indium Phosphide (InP) Single Crystal Substrates, <100> Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.8687 Angstrom – Density: 4.81 g/cm³ – Melting Point: 1062 °C – Mohs Hardness: 3 (Mohs) – Growth Method: LEC Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration (n): < 3 x 10¹⁶ cm⁻³ – Mobility: >…
Indium Phosphide (InP) Single Crystal Wafers, <100> Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.8687 Angstrom – Density: 4.81 g/cm³ – Melting Point: 1062 °C – Mohs Hardness: 3 (Mohs) – Growth Method: LEC Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration (n): < 3 x 10¹⁶ cm⁻³ – Mobility: >…
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