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Showing 225–240 of 249 results
Tungsten Disulfide (WS₂) CAS Number: 12138-09-9 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WS₂ films are grown directly on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tungsten disulfide (WS₂) is a…
Tungsten Disulfide (WS₂) Film on 2-Inch Sapphire Wafer CAS Number: 12138-09-9 Substrate Size: 2-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WS₂ films are grown directly on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tungsten disulfide…
Tungsten Disulfide (WS₂) Film on 4-Inch Sapphire Wafer CAS Number: 12138-09-9 Substrate Size: 4-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WS₂ films are grown directly on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tungsten disulfide…
V-Doped MoSe₂ Crystals V-doped MoSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure. Vanadium doping introduces magnetic properties, modifies the electronic band structure, and enhances the material’s catalytic and optoelectronic performance. These characteristics make V-doped MoSe₂ a promising material for spintronics, quantum research, and energy applications. Sample Size Options: Crystals…
V₂NiSe₄ Crystals V₂NiSe₄ is a layered transition metal chalcogenide with a van der Waals structure, exhibiting remarkable electronic, magnetic, and optical properties. Its unique combination of high electrical conductivity, anisotropic characteristics, and potential for magnetic ordering makes it a promising material for applications in spintronics, optoelectronics, and quantum materials research. Our V₂NiSe₄ crystals are synthesized…
VI₃ Crystals VI₃ is a layered transition metal halide with a van der Waals structure, known for its intrinsic ferromagnetic properties and unique electronic characteristics. It exhibits long-range ferromagnetic ordering at low temperatures, making it a promising material for spintronics, quantum materials research, and 2D material studies. Our VI₃ crystals are synthesized using high-temperature vapor…
VS₂ Crystals VS₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure, known for its metallic conductivity and unique electronic and magnetic properties. As a quasi-two-dimensional material, VS₂ exhibits potential for applications in spintronics, catalysis, and energy storage. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm²…
VSe₂ Crystals VSe₂ (Vanadium Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, exhibiting metallic conductivity, strong electron correlation effects, and charge density wave (CDW) behavior. It has gained significant attention in spintronics, superconductivity research, nanoelectronics, and energy storage applications due to its unique electronic and magnetic properties. Our VSe₂…
W-Doped MoSe₂ Crystals W-doped MoSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure. Tungsten doping modifies the electronic band structure, enhances charge carrier mobility, and introduces unique optical and catalytic properties, making it an excellent material for optoelectronics, energy storage, and quantum material studies. Sample Size Options: Crystals larger than…
WS₂ Crystals WS₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, widely known for its notable electronic, optical, and catalytic properties. It exhibits a direct bandgap (~2.0 eV) in monolayer form and an indirect bandgap (~1.4 eV) in bulk, making it highly suitable for applications in nanoelectronics, optoelectronics, and energy…
WS₂ FET Device Device Specifications: Packaging: Single device (1 unit per package) Device Dimensions: 1 cm x 1 cm Substrate: SiO₂/Si (Silicon with 300 nm SiO₂ layer) Device Structure: SiO₂/Si Substrate / WS₂ Channel / Au or Cr+Au Electrodes Device Description & Features: High-Performance 2D Semiconductor: Tungsten disulfide (WS₂) is a layered transition metal dichalcogenide…
WSe₂ Crystals WSe₂ (Tungsten Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, known for its strong electronic, optical, and quantum properties. It exhibits a tunable bandgap, strong spin-orbit coupling, and excellent charge carrier mobility, making it highly suitable for applications in nanoelectronics, optoelectronics, spintronics, and quantum computing. Our WSe₂…
WSe₂ FET Device Device Specifications: Packaging: Single device (1 unit per package) Device Dimensions: 1 cm x 1 cm Substrate: SiO₂/Si (Silicon with 300 nm SiO₂ layer) Device Structure: SiO₂/Si Substrate / WSe₂ Channel / Au or Cr+Au Electrodes Device Description & Features: High-Performance 2D Semiconductor: Tungsten diselenide (WSe₂) is a layered transition metal dichalcogenide…
WSeTe Crystals WSeTe is a layered transition metal chalcogenide alloy with a van der Waals structure, exhibiting a tunable bandgap and unique topological properties. As a mixed chalcogenide alloy, WSeTe offers a versatile platform for studying quantum phenomena, spin-orbit coupling, and electronic transport properties. Sample Size Options: Crystals larger than 10 mm² Crystals larger than…
WSSe Crystals WSSe is a layered transition metal dichalcogenide (TMDC) alloy with a van der Waals structure, offering tunable bandgap and unique optoelectronic properties. As a mixed chalcogenide, WSSe combines the characteristics of WS₂ and WSe₂, making it a versatile material for quantum research, optoelectronics, and energy-related applications. Sample Size Options: Crystals larger than 10…
WTe₂ Crystals WTe₂ (Tungsten Ditelluride) is a layered transition metal dichalcogenide (TMD) with a unique distorted 1T’ phase structure. It is widely recognized as a type-II Weyl semimetal, exhibiting fascinating quantum properties such as extremely large magnetoresistance (XMR), non-saturating electrical conductivity, and potential topological states. These properties make WTe₂ a key material for applications in…
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