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Showing 209–224 of 249 results
TaCo₂Te₂ Crystals TaCo₂Te₂ is a layered transition metal telluride with a van der Waals structure, exhibiting unique electronic, optical, and magnetic properties. Its high conductivity, anisotropic behavior, and potential for topological and quantum materials research make it a promising candidate for advanced applications in spintronics, energy storage, and low-dimensional materials science. Our TaCo₂Te₂ crystals are…
TaNi₂Te₂ Crystals TaNi₂Te₂ is a layered transition metal telluride with a van der Waals structure, known for its excellent electronic, optical, and thermoelectric properties. Its high electrical conductivity, strong spin-orbit coupling, and potential for quantum materials research make it an ideal material for spintronics, optoelectronics, and energy applications. Our TaNi₂Te₂ crystals are synthesized using the…
TaNi₂Te₃ Crystals TaNi₂Te₃ is a layered transition metal telluride with a van der Waals structure, exhibiting unique electronic, magnetic, and thermoelectric properties. Its high conductivity, strong spin-orbit coupling, and potential for quantum materials research make it a promising material for spintronics, optoelectronics, and energy applications. Our TaNi₂Te₃ crystals are synthesized using the Chemical Vapor Transport…
TaS₂ (1T Phase) Crystals TaS₂ (Tantalum Disulfide, 1T phase) is a layered transition metal dichalcogenide (TMD) exhibiting strong electron correlation effects, charge density wave (CDW) transitions, and potential superconducting behavior. It has been widely studied for its quantum electronic properties, making it a promising material for applications in condensed matter physics, nanoelectronics, and quantum devices….
TaSe₂ Crystals TaSe₂ (2H Phase) Crystals (Tantalum Diselenide) TaSe₂ (Tantalum Diselenide, 2H phase) is a layered transition metal dichalcogenide (TMD) with a hexagonal crystal structure. It exhibits metallic conductivity, strong electron correlation effects, charge density wave (CDW) transitions, and potential superconducting behavior at low temperatures. These properties make TaSe₂ a promising material for applications in…
TaTe₂ Crystals TaTe₂ is a layered transition metal dichalcogenide (TMD) known for its intriguing electronic, optical, and structural properties. It exhibits charge density wave (CDW) behavior, strong spin-orbit coupling, and anisotropic conductivity, making it a promising material for applications in quantum materials research, spintronics, and 2D materials studies. Our TaTe₂ crystals are synthesized using the…
Te Crystals Tellurium (Te) is a semimetallic element with a trigonal crystal structure, widely used in electronic, optoelectronic, and thermoelectric applications. Its unique anisotropic properties, combined with excellent thermal and electrical conductivity, make it an essential material for advanced research and industrial applications. Sample Size Options: Crystals larger than 10 mm² Material Properties: Crystal Structure:…
Tin Diselenide (SnSe₂) CAS Number: 20770-09-6 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: SnSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tin diselenide (SnSe₂) is a…
Tin Disulfide (SnS₂) CAS Number: 1315-01-1 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: SnS₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tin sulfide (SnS₂) is a…
Tin Sulfide (SnS) CAS Number: 1314-95-0 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Morphology Options: Isolated Crystallites Continuous Multilayer Film For specific requirements regarding morphology or thickness, please contact us directly. Substrate Options: SnS films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon…
TiS₂ Crystals TiS₂ (Titanium Disulfide) is a layered transition metal dichalcogenide (TMD) with a hexagonal (1T) crystal structure, exhibiting metallic conductivity and excellent electrochemical properties. It has been widely investigated for its applications in energy storage, electronic devices, and 2D material research due to its high electrical conductivity, layered structure, and chemical stability. Our TiS₂…
TiS₃ Crystals TiS₃ is a layered transition metal trichalcogenide (TMT) with a quasi-one-dimensional (1D) crystal structure. This unique structure endows it with pronounced anisotropic optical and electrical properties, making it an ideal candidate for applications in optoelectronics, energy storage, and advanced 2D material research. Combining high electrical conductivity with excellent photoconductivity, TiS₃ offers broad versatility…
TiSe₂ Crystals TiSe₂ (Titanium Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, exhibiting metallic conductivity, charge density wave (CDW) transitions, and potential superconducting behavior at low temperatures. It is widely studied in the fields of condensed matter physics, superconductivity, nanoelectronics, and energy storage due to its unique electronic and…
Tungsten Diselenide (WSe₂) CAS Number: 12067-46-8 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tungsten diselenide (WSe₂) is a…
Tungsten Diselenide (WSe₂) on 2-Inch Sapphire Wafer CAS Number: 12067-46-8 Substrate Size: 2-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tungsten diselenide (WSe₂)…
Tungsten Diselenide (WSe₂) on 4-Inch Sapphire Wafer CAS Number: 12067-46-8 Substrate Size: 4-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Tungsten diselenide (WSe₂)…
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