Mechanically Exfoliated Black Phosphorus FET Device

Mechanically Exfoliated Black Phosphorus FET Device

Black Phosphorus (BP) FET Device

Device Structure:
Highly Doped Conductive Si Substrate / 300 nm SiO₂ Layer / Au Electrodes / Mechanically Exfoliated Few-Layer Black Phosphorus

Device Specifications:
Channel Width: 5 µm
Few-Layer Black Phosphorus (BP)
For specific thickness requirements, please contact us.

Device Description & Features:
High-Mobility 2D Semiconductor: Black phosphorus (BP) is a layered van der Waals material with a layer-dependent direct bandgap (~0.3 eV in bulk to ~1.5 eV in monolayer) and high carrier mobility. Back-Gated FET Configuration: The SiO₂/Si back-gate structure enables efficient electrostatic control, leading to low-power operation and high on/off current ratio.
Mechanically Exfoliated Few-Layer BP: Ensures high crystal quality, minimal defects, and superior charge transport properties.
Gold Electrodes: Forms low-resistance Ohmic contacts, optimizing carrier injection efficiency.
Anisotropic Transport: BP exhibits direction-dependent electrical properties, enabling directional electronic applications.

Applications:
High-Performance Field-Effect Transistors (FETs):
BP FETs exhibit high mobility, strong gate tunability, and tunable bandgap, making them ideal for nanoelectronic applications. Flexible & Low-Power Electronics:
BP’s mechanical flexibility makes it suitable for wearable devices, transparent electronics, and flexible transistors. Infrared Optoelectronics & Photodetectors:
The layer-dependent bandgap allows BP to function as an infrared-sensitive material, ideal for photodetectors and near-infrared optoelectronics. Neuromorphic & Quantum Computing:
The anisotropic electronic properties of BP make it a promising material for neuromorphic and quantum computing applications.