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Showing 49–64 of 249 results
FeCl₂ Crystals FeCl₂ is a layered transition metal halide with a van der Waals structure, known for its intrinsic magnetic and electronic properties. It exhibits antiferromagnetic ordering and is a promising material for spintronics, quantum materials research, and 2D material studies. Our FeCl₂ crystals are synthesized using high-temperature vapor transport techniques, ensuring high purity and…
FeCl₃ Crystals FeCl₃ is a layered transition metal halide with a van der Waals structure, known for its unique magnetic and electronic properties. It exhibits intrinsic antiferromagnetic ordering and is a versatile material for 2D material studies, spintronics, and quantum magnetic applications. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm²…
FePS₃ Crystals FePS₃ is a layered antiferromagnetic semiconductor with a van der Waals structure, exhibiting strong in-plane magnetic anisotropy and Néel-type antiferromagnetic ordering. It is an excellent material for spintronics, low-dimensional magnetism studies, and 2D material research. Our FePS₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and…
FePSe₃ Crystals FePSe₃ is a layered antiferromagnetic semiconductor with a van der Waals structure, exhibiting strong in-plane magnetic anisotropy and excellent electronic properties. It belongs to the MPX3 family (M = transition metal, X = chalcogen), known for tunable magnetic behavior and semiconducting characteristics. This material is ideal for applications in spintronics, quantum materials research,…
GaGeTe Crystals GaGeTe is a layered semiconductor with a van der Waals structure, exhibiting unique electronic, optical, and thermoelectric properties. Its anisotropic behavior and excellent cleavage properties make it an ideal material for 2D material research, optoelectronics, and quantum materials studies. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Material…
GaPS₄ Crystals GaPS₄ is a layered transition metal thiophosphate with a van der Waals structure, known for its semiconducting properties, high optical absorption, and potential for 2D material studies. Its unique electronic and optical characteristics make it a promising candidate for optoelectronics, energy storage, and quantum materials research. Our GaPS₄ crystals are synthesized using the…
GaS Crystals GaS is a layered semiconductor belonging to the group-III metal chalcogenides, with a van der Waals structure that makes it ideal for 2D material research. GaS exhibits a wide bandgap and excellent photoconductivity, making it highly suitable for optoelectronic devices, energy applications, and nanoscale electronics. Our GaS crystals are grown using high-temperature vapor…
GaSe Crystals GaSe (Gallium Selenide) is a layered semiconductor material with a van der Waals structure, exhibiting a direct bandgap and pronounced nonlinear optical properties. Its unique crystallographic structure facilitates mechanical exfoliation, allowing the production of high-quality monolayer or few-layer two-dimensional (2D) materials. These characteristics make GaSe a promising candidate for applications in optoelectronics, photodetectors,…
GaTe Crystals GaTe is a layered semiconductor material with a van der Waals structure, known for its anisotropic optical and electronic properties. It exhibits a direct bandgap, strong photoluminescence, and excellent environmental stability, making it a versatile material for optoelectronic devices, quantum materials research, and 2D material studies. Sample Size Options: Crystals larger than 10…
GeBi₂Te₄ Crystals GeBi₂Te₄ is a layered topological insulator with a van der Waals structure, known for its strong electronic, optical, and thermoelectric properties. Its robust surface states, high thermoelectric efficiency, and anisotropic behavior make it a promising material for quantum materials research, energy harvesting, and spintronic applications. Our GeBi₂Te₄ crystals are synthesized using the Chemical…
GeBi₄Te₇ Crystals GeBi₄Te₇ is a layered chalcogenide material with a van der Waals structure, known for its high thermoelectric, electronic, and optical properties. It is a promising candidate for energy conversion, quantum materials research, and spintronic applications due to its high thermoelectric efficiency, robust surface states, and strong spin-orbit coupling. Our GeBi₄Te₇ crystals are synthesized…
GePbS₃ Crystals GePbS₃ is a layered ternary chalcogenide material with unique optical, electronic, and thermal properties. Its wide bandgap and strong light absorption make it a promising candidate for optoelectronics, photovoltaics, and advanced 2D material research. Sample Size Options: Crystals larger than 10 mm² Material Properties: Layered Structure: Facilitates exfoliation into thin layers for 2D…
GeS Crystals GeS is a layered semiconductor material belonging to the family of group-IV monochalcogenides. It exhibits strong anisotropic optical and electronic properties due to its unique orthorhombic crystal structure. With a narrow bandgap and excellent environmental stability, GeS is a promising material for optoelectronics, photovoltaics, and 2D material research. Sample Size Options: Crystals larger…
GeS₂ Crystals GeS₂ is a layered chalcogenide material with a unique optical and electronic structure, making it highly suitable for applications in optoelectronics, photonics, and 2D material research. With its wide bandgap and excellent semiconducting properties, GeS₂ offers promising opportunities in energy conversion, sensing, and advanced materials studies. Sample Size Options: Crystals larger than 10…
GeSb₄Te₇ Crystals GeSb₄Te₇ is a layered chalcogenide material with a van der Waals structure, well-known for its phase-change properties and thermoelectric performance. It exhibits high electrical conductivity, strong optical absorption, and phase stability, making it a promising material for non-volatile memory, energy conversion, and optoelectronics applications. Our GeSb₄Te₇ crystals are synthesized using the Chemical Vapor…
GeSe Crystals GeSe (Germanium Selenide) is a layered semiconductor material with an orthorhombic crystal structure. It is known for its strong anisotropic electronic and optical properties, making it a promising candidate for applications in nanoelectronics, optoelectronics, thermoelectrics, and energy storage devices. Our GeSe crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high…
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