SnPSe₃ Crystals

Price range: £499.99 through £1,099.99

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    SnPSe₃ Crystals

    SnPSe₃ is a layered transition metal chalcogenide with a van der Waals structure. It exhibits unique semiconducting, optical, and anisotropic properties, making it an excellent material for optoelectronics, energy conversion, and advanced 2D material studies. Our SnPSe₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method to ensure high purity, precise stoichiometry, and high crystallinity for cutting-edge research and applications.

    Sample Size Options:
    Crystals larger than 10 mm²
    Crystals larger than 25 mm²
    Crystals larger than 100 mm²

    Material Properties:
    Layered van der Waals Structure: Enables exfoliation into thin layers for 2D material research.
    Semiconducting Behavior: Features an indirect bandgap (~1.8 eV) suitable for optoelectronic and photovoltaic applications.
    Strong Optical Absorption: Effective light absorption in the visible-to-near-infrared range.
    Environmental Stability: Stable under controlled inert conditions.

    Crystal Structure:
    Type: Monoclinic layered structure
    Features: Cleavable layers ideal for thin-film and nanoscale device fabrication.

    Degree of Exfoliation:
    Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research.

    Other Characteristics:
    Optoelectronic Potential: High photoluminescence and strong absorption make it suitable for photonic devices. Energy

    Applications: Promising for thermoelectric and photovoltaic technologies.
    Anisotropic Properties: Exhibits direction-dependent electronic and optical characteristics.

    Applications:
    Optoelectronics:
    Ideal for photodetectors, light-emitting devices, and solar cells. Energy

    Applications:
    Promising for thermoelectric devices, energy conversion, and photocatalysis.
    2D Material Research:
    Suitable for exfoliation into thin layers and integration into van der Waals heterostructures. Quantum Materials Research:
    Enables exploration of low-dimensional semiconducting and optoelectronic properties. Sensors:
    High sensitivity to environmental changes, ideal for advanced sensing applications.

    Option 1

    > 10 mm², > 100 mm², > 25 mm²