Showing 913–928 of 1232 results

  • Silicon (Si) Single Crystal Wafers (Undoped)

    Silicon (Si) Single Crystal Wafers (Undoped)

    Price range: £34.99 through £190.99

    Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm³ – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

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  • Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular

    Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular

    Price range: £137.99 through £707.99

    Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular (Price Upon Request) Nanostore’s Silicon (Si) sputtering target is a 99.999% purity, intrinsic / n-type / p-type semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process…

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  • Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates

    Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates

    Price range: £226.99 through £262.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers

    Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers

    £994.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates

    Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates

    Price range: £39.99 through £190.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers

    Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers

    Price range: £178.99 through £1,210.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates

    Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates

    Price range: £190.99 through £226.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers

    Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers

    £574.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates

    Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates

    Price range: £188.99 through £226.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers

    Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers

    £838.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates

    Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates

    Price range: £166.99 through £190.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (P-type 6H-SiC) Single Crystal Wafers

    Silicon Carbide (P-type 6H-SiC) Single Crystal Wafers

    £466.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (SI 4H-SiC) Single Crystal Substrates

    Silicon Carbide (SI 4H-SiC) Single Crystal Substrates

    Price range: £46.99 through £202.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (SI 4H-SiC) Single Crystal Wafers

    Silicon Carbide (SI 4H-SiC) Single Crystal Wafers

    Price range: £190.99 through £1,414.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (SI 6H-SiC) Single Crystal Substrates

    Silicon Carbide (SI 6H-SiC) Single Crystal Substrates

    Price range: £214.99 through £262.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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  • Silicon Carbide (SI 6H-SiC) Single Crystal Wafers

    Silicon Carbide (SI 6H-SiC) Single Crystal Wafers

    £742.99

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (3C-SiC vs 4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – 3C-SiC: a=4.3596 Angstrom (cubic, zinc blende) – Stacking Sequence: 3C (ABC) / 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21…

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