Silicon (Si) Single Crystal Wafers (Undoped)
価格帯: ¥7,552 – ¥41,223Silicon (Si) Single Crystal Substrates (Wafers) 物理的特性: – 結晶構造: Cubic System – 格子定数: a=5.4301 Angstrom – 硬度: 6.…
結果の913～928/1232を表示しています
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Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular
価格帯: ¥29,784 – ¥152,812Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular (Price Upon Request) Nan…
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Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates
価格帯: ¥48,993 – ¥56,763Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers
¥214,758Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates
価格帯: ¥8,631 – ¥41,223Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性 (3C-SiC vs 4H-SiC vs 6H-SiC): – 格子定数: – 4H-SiC:…
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Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers
価格帯: ¥38,633 – ¥261,379Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates
価格帯: ¥41,223 – ¥48,993Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers
¥124,105Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates
価格帯: ¥40,791 – ¥48,993Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers
¥181,087Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates
価格帯: ¥36,043 – ¥41,223Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (P-type 6H-SiC) Single Crystal Wafers
¥100,795Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (SI 4H-SiC) Single Crystal Substrates
価格帯: ¥10,142 – ¥43,813Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (SI 4H-SiC) Single Crystal Wafers
価格帯: ¥41,223 – ¥305,410Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (SI 6H-SiC) Single Crystal Substrates
価格帯: ¥46,403 – ¥56,763Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …
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Silicon Carbide (SI 6H-SiC) Single Crystal Wafers
¥160,366Silicon Carbide (SiC) Single Crystal Substrates (Wafers) 物理的特性（3C-SiC vs 4H-SiC vs 6H-SiC）： – 格子定数： – 4H-SiC: …