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Showing 353–368 of 1232 results
Gadolinium Gallium Garnet (Gd₃Ga₅O₁₂, GGG) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.376Angstrom – 2 theta: 51°07′ – Density: 7.09 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 6.5 (Mohs) – Growth Method: CZ Standard Specifications: – Orientation: (111) miscut < 0.3° (Available <0.1°) (110) miscut < 0.3° (Available…
Gadolinium Oxide (Gd₂O₃) Evaporation Pellets, 99.99% Purity (Request Current Price) Nanostore Gadolinium Oxide (Gd₂O₃) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled…
Gadolinium Oxide (Gd₂O₃) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) Nanostore’s Gadolinium Oxide (Gd₂O₃) sputtering target is a 99.99% purity rare-earth oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency,…
Gadolinium Scandate (GdScO₃) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constant: a=5.45Angstrom , b=5.75Angstrom , c=7.93Angstrom – Melting Point: 2127°C – Density: 6.6 g/cm³ – Growth Method: CZ Standard Specifications: – Orientation: (110) miscut < 0.3° (Available < 0.1°) (001) miscut < 0.3° (Available < 0.1°) (100) miscut < 0.3°…
Gadolinium Scandium Gallium Garnet GSGG (Gd₃Sc₂Ga₃O₁₂) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 6.44 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
Gadolinium Scandium Gallium Garnet GSGG (Gd₃Sc₂Ga₃O₁₂) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 6.44 g/cm³ – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
GaGeTe Crystals GaGeTe is a layered semiconductor with a van der Waals structure, exhibiting unique electronic, optical, and thermoelectric properties. Its anisotropic behavior and excellent cleavage properties make it an ideal material for 2D material research, optoelectronics, and quantum materials studies. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Material…
Gallium Antimonide (GaSb) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) Nanostore’s Gallium Antimonide (GaSb) sputtering target is a 99.99% purity III-V compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency,…
Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° / 16 ±…
Gallium Arsenide (GaAs) Single Crystal Wafers – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…
Gallium Nitride (GaN) Evaporation Pellets, 99.99% Purity Nanostore Gallium Nitride (GaN) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity are…
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
Gallium Nitride (GaN) Single Crystal Wafers Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
Gallium Nitride (GaN) Sputtering Target, 99.99% (4N) Purity, Circular Nanostore’s Gallium Nitride (GaN) sputtering target is a high-purity compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity…
Gallium Oxide (Ga₂O₃) Evaporation Pellets, 99.99% Purity Nanostore Gallium Oxide (Ga₂O₃) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity are…
Gallium Oxide (Ga₂O₃) Sputtering Target, 99.99% Purity, Circular Nanostore’s Gallium Oxide (Ga₂O₃) sputtering target is a 99.99% purity wide-bandgap oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material…
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