WSe₂ Crystals

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    WSe₂ Crystals

    WSe₂ (Tungsten Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, known for its strong electronic, optical, and quantum properties. It exhibits a tunable bandgap, strong spin-orbit coupling, and excellent charge carrier mobility, making it highly suitable for applications in nanoelectronics, optoelectronics, spintronics, and quantum computing. Our WSe₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, superior crystallinity, and well-controlled stoichiometry.

    Sample Size Options:
    Crystals larger than 10 mm²
    Crystals larger than 25 mm²
    Crystals larger than 100 mm²

    Material Properties:
    Layered van der Waals Structure: Enables facile exfoliation into monolayers or few-layer nanosheets for 2D material studies.
    Tunable Bandgap: Exhibits an indirect bandgap (~1.2 eV) in bulk and a direct bandgap (~1.65 eV) in monolayer form, suitable for optoelectronic applications.
    High Carrier Mobility: Suitable for high-speed transistors and nanoelectronic applications.
    Strong Photoluminescence: Monolayer WSe₂ exhibits intense photoluminescence, making it ideal for light-emitting devices. Spin-Orbit Coupling: Enables valleytronic and spintronic applications in quantum materials research.
    Excellent Environmental Stability: Maintains structural integrity under ambient conditions.

    Crystal Structure:
    Type: Hexagonal (2H phase) layered structure
    Features: High crystallinity with uniform, defect-free layers, ideal for thin-film fabrication and nanoscale device applications.

    Degree of Exfoliation:
    Ease of Use: Easily exfoliated into monolayers or few-layer nanosheets for advanced materials research and heterostructure fabrication.

    Other Characteristics:
    Quantum Confinement Effects: Exhibits strong excitonic effects and light-matter interactions in monolayer form.
    Anisotropic Transport Properties: Exhibits direction-dependent charge transport, suitable for novel electronic and thermoelectric devices.
    Topological Properties: Potential applications in quantum Hall effects and topological insulator research.

    Applications:
    Optoelectronics:
    Ideal for photodetectors, LEDs, and photovoltaic cells due to strong light absorption and photoluminescence. Nanoelectronics:
    High-performance material for transistors, memory devices, and flexible electronic circuits. Spintronics & Quantum Computing:
    Enables research on spin-orbit coupling, valley polarization, and next-generation quantum technologies.
    2D Material Studies:
    Perfect for exfoliation into monolayers and integration into van der Waals heterostructures. Sensors & Catalysis:
    High sensitivity for gas detection, chemical sensing, and electrocatalytic applications such as hydrogen evolution reactions (HER). Synthesis Method:
    Chemical Vapor Transport (CVT): Ensures high-quality crystals with excellent purity, uniform thickness, and high structural integrity.

    Option 1

    > 10 mm², > 100 mm², > 25 mm²