Silicon Carbide (SiC) Sputtering Target, 99.9% Purity, Circular (Price Upon Request)
Sputtering Targets

Silicon Carbide (SiC) Sputtering Target, 99.9% Purity, Circular (Price Upon Request)

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    Silicon Carbide (SiC) Sputtering Target, 99.9% Purity, Circular (Price Upon Request)

    Nanostore’s Silicon Carbide (SiC) sputtering target is a 99.9% purity carbide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important. Pricing is provided upon request because final cost depends on selected dimensions and current material market conditions.

    Key Features

    Research-Grade Source Material
    Supplied as 99.9% Purity for thin-film workflows that require controlled source composition and dependable deposition behavior.

    Circular Target Formats
    Available in circular diameters including 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 4 inch diameter (101.6 mm), 3.15 inch diameter (80 mm), 3.94 inch diameter (100 mm). Thickness and mounting options include 3 mm thick, 3 mm + 2 mm Cu backing, 3 mm + 3 mm Cu backing, 3 mm + 1 mm Cu backing, 3 mm + 2 mm Cu backing + magnetic shim, 3 mm + 3 mm Cu backing + magnetic shim, depending on selected configuration.

    Controlled Processing and Inspection
    Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

    Clean Handling and Packaging
    Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

    Technical Specifications

    Material: Silicon Carbide (SiC)
    Purity / Composition: 99.9% Purity
    Form: Circular sputtering target
    Available Diameters: 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 4 inch diameter (101.6 mm), 3.15 inch diameter (80 mm), 3.94 inch diameter (100 mm)
    Available Thickness / Backing Options: 3 mm thick, 3 mm + 2 mm Cu backing, 3 mm + 3 mm Cu backing, 3 mm + 1 mm Cu backing, 3 mm + 2 mm Cu backing + magnetic shim, 3 mm + 3 mm Cu backing + magnetic shim
    Compatible Equipment: Single-target sputtering systems, multi-target sputtering systems, ion sputtering systems, and magnetron sputtering equipment
    Packaging: Protective target packaging for laboratory shipment and storage

    Common Applications

    – silicon carbide thin-film deposition; hard coating and high-temperature ceramic film research; wide-bandgap semiconductor material studies; SiC PVD process development
    – Academic, industrial, and pilot-scale thin-film process development

    Option 1

    99.9% (3N)
    Option 2

    1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 3.15 inch diameter (80 mm), 3.94 inch diameter (100 mm), 4 inch diameter (101.6 mm)
    Option 3

    3 mm + 1 mm Cu backing, 3 mm + 2 mm Cu backing, 3 mm + 2 mm Cu backing + magnetic shim, 3 mm + 3 mm Cu backing, 3 mm + 3 mm Cu backing + magnetic shim, 3 mm thick

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