ReSe₂ Crystals

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    ReSe₂ Crystals

    ReSe₂ (Rhenium Diselenide) is a layered transition metal dichalcogenide (TMD) with a distorted 1T structure, exhibiting in-plane anisotropy, strong spin-orbit coupling, and layer-dependent optical and electronic properties. Unlike conventional TMDs with hexagonal symmetry, ReSe₂ features a triclinic crystal structure, leading to highly anisotropic transport and optical responses. It is an ideal material for applications in optoelectronics, anisotropic electronics, nonlinear optics, and 2D material research. Our ReSe₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, excellent crystallinity, and precise stoichiometry.

    Sample Size Options:
    Crystals larger than 10 mm²
    Crystals larger than 25 mm²
    Crystals larger than 100 mm²

    Material Properties:
    Layered van der Waals Structure: Enables facile exfoliation into monolayers or few-layer nanosheets for 2D material studies. Triclinic

    Crystal Structure: Exhibits in-plane anisotropy in electrical, optical, and vibrational properties.
    Indirect Bandgap Semiconductor: Bulk ReSe₂ has an indirect bandgap of ~1.2 eV, which shifts to a direct bandgap of ~1.35 eV in monolayer form, suitable for optoelectronic applications.
    Strong Spin-Orbit Coupling: Enhances valleytronic and spintronic applications. Linear Dichroism and Anisotropic Optical Absorption: Enables polarization-dependent photodetector applications.
    High Chemical Stability: More stable than Mo- and W-based TMDs under ambient conditions.

    Crystal Structure:
    Type: Triclinic (distorted 1T phase) layered structure
    Features: High crystallinity with uniform, defect-free layers, suitable for thin-film fabrication and nanoscale device integration.

    Degree of Exfoliation:
    Ease of Use: Easily exfoliated into monolayers or few-layer nanosheets for advanced materials research and heterostructure fabrication.

    Other Characteristics:
    Anisotropic Electrical & Optical Properties: Exhibits strong direction-dependent charge transport and absorption.
    Excellent Environmental Stability: Maintains structural integrity under ambient conditions, making it more robust than MoSe₂ or WSe₂. Potential for Quantum Materials Research: Useful for studying spin-orbit interactions and novel valleytronic effects.

    Applications:
    Optoelectronics & Photodetectors:
    Ideal for anisotropic photodetectors and polarization-sensitive light sensors. Nanoelectronics:
    High-performance material for anisotropic transistors and flexible electronics. Spintronics & Quantum Computing:
    Enables research on spin-orbit coupling, valley polarization, and topological quantum effects.
    2D Material Studies:
    Perfect for exfoliation into monolayers and integration into van der Waals heterostructures. Nonlinear Optics & Polarization Devices:
    Strong second-harmonic generation (SHG) and anisotropic optical response make it suitable for frequency conversion applications. Synthesis Method:
    Chemical Vapor Transport (CVT): Ensures high-quality crystals with excellent purity, uniform thickness, and high structural integrity.

    Option 1

    > 10 mm², > 100 mm², > 25 mm²