Molybdenum Disulfide (MoS₂)

Molybdenum Disulfide (MoS₂)

CAS Number: 1317-33-5

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
MoS₂ films are directly grown on SiO₂/Si or sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance.

Fundamental Properties:
Undoped molybdenum disulfide (MoS₂) is a layered n-type semiconductor belonging to the family of transition metal dichalcogenides. In its monolayer form, MoS₂ has a direct bandgap of approximately 1.85 eV, making it highly suitable for optoelectronic applications. In bulk form, MoS₂ exhibits an indirect bandgap of 1.23 eV. The bandgap of multilayer MoS₂ lies between these two values, gradually transitioning from direct to indirect as the number of layers increases.

Applications:
MoS₂ thin films are widely applied in various fields, including optoelectronic devices, microelectronics, biosensors, and chemical sensors, due to their unique electronic and optical properties.

References:
1. Gao, M.-R., Liang, J.-X., Zheng, Y.-R., Xu, Y.-F., Jiang, J., Gao, Q., Li, J., & Yu, S.-H. (2015). An efficient molybdenum disulfide/cobalt diselenide hybrid catalyst for electrochemical hydrogen generation. Nature Communications, 6, 5982. https://doi.org/10.1038/ncomms6982
2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, I. V., & Kis, A. (2011). Single-layer MoS₂ transistors. Nature Nanotechnology, 6(3), 147-150. https://doi.org/10.1038/nnano.2010.279
3. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012). Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology, 7(11), 699-712. https://doi.org/10.1038/nnano.2012.193