Platinum Diselenide (PtSe₂)

Platinum Diselenide (PtSe₂)

CAS Number: 12038-26-5

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
PtSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance.

Fundamental Properties:
Platinum diselenide (PtSe₂) is a layered transition metal dichalcogenide (TMD) with a semimetallic character in its bulk form. Unlike many other TMDs, PtSe₂ exhibits a transition from semimetallic to semiconducting behavior as it transitions from bulk to monolayer. Monolayer PtSe₂ has an indirect bandgap of approximately 1.2 eV, making it suitable for applications in electronics and optoelectronics. PtSe₂ also possesses exceptional environmental stability, high carrier mobility, and strong spin-orbit coupling, making it a highly versatile material for advanced applications. Its high catalytic activity further enables its use in energy and chemical applications.

Applications:
Electronics: PtSe₂’s semiconducting properties in its monolayer form and semimetallic behavior in bulk make it a versatile material for field-effect transistors (FETs) and other electronic devices.
Optoelectronics: The tunable bandgap of PtSe₂ allows for its integration into photodetectors, solar cells, and light sensors. Energy Storage and Catalysis: PtSe₂ demonstrates excellent catalytic activity for hydrogen evolution reactions (HER) and is a promising material for energy storage devices, including supercapacitors and batteries.
Sensors: PtSe₂-based gas and chemical sensors exhibit high sensitivity and selectivity, owing to its excellent electronic properties.
Quantum Technologies: Its spin-orbit coupling makes PtSe₂ a candidate for spintronic applications and other quantum technologies.