InSiTe₃ Crystals

Price range: £499.99 through £569.99

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    InSiTe₃ Crystals

    InSiTe₃ is a layered chalcogenide material with a van der Waals structure, known for its unique electronic, optical, and thermoelectric properties. Its tunable bandgap, high thermoelectric performance, and excellent stability make it a promising material for optoelectronics, energy storage, and advanced 2D material research. Our InSiTe₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method to ensure high purity, high crystallinity, and reliable performance for cutting-edge research.

    Sample Size Options:
    Crystals larger than 10 mm²
    Crystals larger than 25 mm²

    Material Properties:
    Layered van der Waals Structure: Facilitates exfoliation into thin layers for 2D material research.
    Semiconducting Behavior: Features a tunable bandgap suitable for optoelectronic applications.
    Thermoelectric Properties: High thermoelectric efficiency for energy applications.
    Optical Absorption: Strong absorption in the visible-to-near-infrared range.

    Crystal Structure:
    Type: Trigonal layered structure
    Features: Cleavable layers ideal for thin-film fabrication and nanoscale research.

    Degree of Exfoliation:
    Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research applications.

    Other Characteristics:
    Optoelectronic Potential: High photoluminescence and quantum efficiency for photonic devices. Energy

    Applications: Promising for thermoelectric and photovoltaic devices.
    Anisotropic Properties: Exhibits direction-dependent optical and electronic behavior.

    Applications:
    Optoelectronics:
    Suitable for photodetectors, light-emitting devices, and solar cells. Energy

    Applications:
    Ideal for thermoelectric devices, photocatalysis, and energy storage systems.
    2D Material Research:
    Perfect for exfoliation into thin layers and integration with van der Waals heterostructures. Quantum Materials Research:
    Enables exploration of low-dimensional semiconducting and optoelectronic properties. Sensors:
    High sensitivity to environmental stimuli, making it suitable for advanced sensing applications.

    Option 1

    > 10 mm², > 25 mm²