Germanium Antimony Telluride (GeSbTe) Sputtering Target, 99.99% Purity, Ge:Sb:Te = 1:2:4 at%, Circular (Price Upon Request)

Germanium Antimony Telluride (GeSbTe) Sputtering Target, 99.99% Purity, Ge:Sb:Te = 1:2:4 at%, Circular (Price Upon Request)

Nanostore’s Germanium Antimony Telluride (GeSbTe) sputtering target is a 99.99% purity, ge:sb:te = 1:2:4 at% phase-change chalcogenide PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important. Pricing is provided upon request because final cost depends on selected dimensions and current material market conditions.

Key Features

Research-Grade Source Material
Supplied as 99.99% Purity, Ge:Sb:Te = 1:2:4 at% for thin-film workflows that require controlled source composition and dependable deposition behavior.

Circular Target Formats
Available in circular diameters including 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm). Thickness and mounting options include 3 mm thick, 3 mm + 2 mm Cu backing, 3 mm + 3 mm Cu backing, 3 mm + 2 mm Cu backing + magnetic shim, 3 mm + 3 mm Cu backing + magnetic shim, depending on selected configuration.

Controlled Processing and Inspection
Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

Clean Handling and Packaging
Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

Technical Specifications

Material: Germanium Antimony Telluride (GeSbTe)
Purity / Composition: 99.99% Purity, Ge:Sb:Te = 1:2:4 at%
Form: Circular sputtering target
Available Diameters: 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm)
Available Thickness / Backing Options: 3 mm thick, 3 mm + 2 mm Cu backing, 3 mm + 3 mm Cu backing, 3 mm + 2 mm Cu backing + magnetic shim, 3 mm + 3 mm Cu backing + magnetic shim
Compatible Equipment: Single-target sputtering systems, multi-target sputtering systems, ion sputtering systems, and magnetron sputtering equipment
Packaging: Protective target packaging for laboratory shipment and storage

Common Applications

– GST thin-film deposition; phase-change memory material research; chalcogenide optical storage film studies; GeSbTe PVD process development
– Academic, industrial, and pilot-scale thin-film process development