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Showing 65–80 of 209 results
Germanium (Ge) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 5.6575 Angstrom – Melting Point: 937.4 °C – Density: 5.323 g/cm³ – Growth Method: CZ Standard Specifications (by Product): Product 1: – Type/Doping: N-type/Sb-doped – Orientation: (111) ± 0.5° – Resistivity: 5~40 ohm-cm – Surface Finish: Single-Side Polished – Dislocation…
Gold-Coated Silicon Substrates (Au/Ti on Si (100)) Overview Our gold-coated silicon substrates are fabricated using high-vacuum magnetron sputtering or thermal evaporation to ensure uniform thickness, strong adhesion, and clean surface morphology suitable for research and device fabrication. A standard 10 nm titanium (Ti) adhesion layer is deposited between the silicon substrate and the gold layer…
Gold-Coated Silicon Wafers (Au/Ti or Au/Cr on Si) – 2″–8″ Overview The 4″ Si (100) | 100 nm Au configuration is the most commonly used specification for laboratory and microfabrication applications. Our gold-coated silicon wafers are fabricated using high-vacuum magnetron sputtering or thermal evaporation to ensure uniform thickness, strong adhesion, and clean surface morphology suitable…
GYSGG (Gd₀.₆₃Y₂.₃₇Sc₂Ga₃O₁₂) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 12.507 Angstrom – 2 theta: 50°40′ – Melting Point: 1877 °C – Density: 5.6 g/cm³ – Mohs Hardness: 7 (Mohs) – Refractive Index: 1.97 – Growth Method: CZ Standard Specifications: – Orientation: (100) miscut < 0.3° (Available <0.1°) (110) miscut…
GYSGG (Gd₀.₆₃Y₂.₃₇Sc₂Ga₃O₁₂) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 12.507 Angstrom – 2 theta: 50°40′ – Melting Point: 1877 °C – Density: 5.6 g/cm³ – Mohs Hardness: 7 (Mohs) – Refractive Index: 1.97 – Growth Method: CZ Standard Specifications: – Orientation: (100) miscut < 0.3° (Available <0.1°) (110) miscut…
HOPG (Highly Oriented Pyrolytic Graphite) Sheets Research Grade – ZYA / ZYB / ZYB-1 Highly Oriented Pyrolytic Graphite (HOPG) is a synthetic graphite crystal with extremely high crystallographic alignment along the c-axis. It is widely used as a standard substrate for surface science, STM/AFM imaging, graphene exfoliation, and thin film deposition. HOPG provides atomically flat…
High Purity Aluminum (Al) Sheets/Foil (99.999%, 5N) – Research Grade Product Description High Purity Aluminum Foil (5N, 99.999%) is a research-grade metallic material designed for advanced laboratory and scientific applications requiring ultra-low impurity levels and controlled surface quality. Unlike commercial household aluminum foil, this material is produced with tightly controlled trace element concentrations to ensure…
Product Description: Overview: A specialized laboratory tool featuring a high-hardness alloy cutting wheel designed for precise scoring of transparent conductive oxide (TCO) glass, including ITO and FTO. It offers a scientific design with a non-slip handle for comfortable long-term use and a built-in metal knocking head for clean substrate separation. Key Specifications: – Cutting Range…
Indium Antimonide (InSb) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.48 Angstrom – Density: 5.775 g/cm³ – Melting Point: 527 °C Standard Specifications: – Type/Doping: N-type – Orientation: (111) – Dimensions: dia 2 inch x 0.5 mm – Surface Finish: Double-Side Polished In face CMP
Indium Antimonide (InSb) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.48 Angstrom – Density: 5.775 g/cm³ – Melting Point: 527 °C Standard Specifications: – Type/Doping: N-type – Orientation: (111) – Dimensions: dia 2 inch x 0.5 mm – Surface Finish: Double-Side Polished In face CMP
Indium Arsenide (InAs) Single Crystal Substrates, <100> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
Indium Arsenide (InAs) Single Crystal Substrates, <111> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
Indium Arsenide (InAs) Single Crystal Wafers, <100> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
Indium Arsenide (InAs) Single Crystal Wafers, <111> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
Indium Phosphide (InP) Single Crystal Substrates, <100> Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.8687 Angstrom – Density: 4.81 g/cm³ – Melting Point: 1062 °C – Mohs Hardness: 3 (Mohs) – Growth Method: LEC Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration (n): < 3 x 10¹⁶ cm⁻³ – Mobility: >…
Indium Phosphide (InP) Single Crystal Wafers, <100> Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.8687 Angstrom – Density: 4.81 g/cm³ – Melting Point: 1062 °C – Mohs Hardness: 3 (Mohs) – Growth Method: LEC Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration (n): < 3 x 10¹⁶ cm⁻³ – Mobility: >…
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