Indium Arsenide (InAs) Single Crystal Substrates, ⟨100⟩ Orientation, 2 pcs/pack

Indium Arsenide (InAs) Single Crystal Substrates, <100> Orientation, 2 pcs/pack
Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: a=6.058 Angstrom
– Melting Point: 942 °C
– Density: 5.66 g/cm³

Standard Specifications (by Type):

1. N-type/undoped
– Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s
– Dislocation Density: < 3 x 10⁴ cm⁻² 2. N-type/Sn-doped – Doping Concentration: (5~20) x 10¹⁷ cm⁻³ – Mobility: > 2000 cm²/V·s
– Dislocation Density: < 1 x 10⁴ cm⁻²

3. N-type/S-doped
– Doping Concentration: (3~80) x 10¹⁷ cm⁻³
– Dislocation Density: < 1 x 10⁴ cm⁻²

4. P-type/Zn-doped
– Doping Concentration: (3~80) x 10¹⁷ cm⁻³
– Mobility: 60~300 cm²/V·s
– Dislocation Density: < 1 x 10⁴ cm⁻²

5. P-type/Mn-doped
– Doping Concentration: (5~60) x 10¹⁷ cm⁻³
– Mobility: 60~300 cm²/V·s
– Dislocation Density: < 1 x 10⁴ cm⁻²