Gold-Coated Silicon Wafers (Au/Ti or Au/Cr on Si)
Au-Coated Si

Gold-Coated Silicon Wafers (Au/Ti or Au/Cr on Si)

Price range: £226.99 through £874.99

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    Gold-Coated Silicon Wafers (Au/Ti or Au/Cr on Si) – 2″–8″
    Overview
    The 4″ Si (100) | 100 nm Au configuration is the most commonly used specification for laboratory and microfabrication applications.
    Our gold-coated silicon wafers are fabricated using high-vacuum magnetron sputtering or thermal evaporation to ensure uniform thickness, strong adhesion, and clean surface morphology suitable for research and device fabrication.
    A controlled adhesion layer (Ti or Cr) is deposited between the silicon substrate and the gold layer to enhance film stability and long-term reliability.
    This product is ideal for electrochemical research, microfabrication, MEMS development, RF structures, and sensor platforms.

    Layer Structure
    Standard structure:
    Au (Gold layer)
    Ti or Cr adhesion layer
    Silicon wafer (100)

    Adhesion Layer Options
    We offer the following standard options:
    Ti (10 nm) – Recommended
    Most widely used in research and microfabrication. Excellent compatibility with Si/SiO₂ and stable for electrochemical applications.
    Ti (20 nm)
    Enhanced adhesion for thicker gold layers (>200 nm) or demanding environments.
    Cr (10 nm)
    Alternative adhesion layer commonly used in MEMS and lithography processes.
    Custom adhesion thickness within 10–30 nm available upon request.

    Gold Thickness Options
    Standard Au thickness:
    50 nm
    100 nm
    200 nm
    300 nm
    500 nm
    1 µm
    Custom thickness available upon request.

    Wafer Specifications
    Standard configuration (default)
    Diameter: 2″, 4″, 6″, 8″
    Orientation: Si (100)
    Doping: N-type, 1–10 Ω·cm resistivity (phosphorus-doped)
    Surface finish: Single-side polished (SSP)
    This configuration is widely used in research laboratories, electrochemistry, and microfabrication.

    Custom options available upon request
    Doping: N-type or P-type
    Surface finish: Single-side polished (SSP) or Double-side polished (DSP)
    Custom resistivity range

    Please contact us for special requirements or bulk orders.

    Deposition Process
    High-vacuum magnetron sputtering
    Thermal evaporation (depending on thickness requirement)
    Controlled deposition ensures good uniformity and strong adhesion across the wafer surface.

    Applications
    Microelectrode fabrication
    Electrochemical studies (HER, OER, CO2RR)
    MEMS device development
    RF and microwave structures
    Bonding pads
    Sensor and biosensor platforms
    Micro-patterned gold devices

    Quality & Packaging
    Uniform film thickness control
    Clean-room compatible handling
    Protective packaging to prevent contamination
    Custom specifications supported

    Why Choose Our Au on Si Wafers?
    Research-grade quality
    Customizable thickness options
    Competitive direct-manufacturer pricing
    Custom Orders
    We support:
    Custom wafer diameter
    Custom gold thickness
    Custom adhesion layer thickness
    Patterned gold upon request
    Contact us for technical consultation and academic pricing.

    Option 1

    12″ Si | 100 nm Au, 2″ Si | 1 um Au, 2″ Si | 100 nm Au, 2″ Si | 200 nm Au, 2″ Si | 50 nm Au, 2″ Si | 500 nm Au, 4″ Si | 100 nm Au, 4″ Si | 200 nm Au, 4″ Si | 300 nm Au, 4″ Si | 50 nm Au, 4″ Si | 500 nm Au, 6″ Si | 100 nm Au, 6″ Si | 200 nm Au, 6″ Si | 300 nm Au, 6″ Si | 50 nm Au, 6″ Si | 500 nm Au, 8″ Si | 100 nm Au, 8″ Si | 150 nm Au, 8″ Si | 200 nm Au, 8″ Si | 300 nm Au
    Option 2

    Adhesion Layer: Cr (10 nm), Adhesion Layer: Ti (10 nm) – Recommended, Adhesion Layer: Ti (20 nm)

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