HfS₃ Crystals

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    HfS₃ Crystals

    HfS₃ is a layered transition metal trichalcogenide (TMT) with a quasi-one-dimensional (1D) structure. It exhibits unique anisotropic electronic and optical properties, making it a promising material for optoelectronics, 2D material studies, and energy storage applications. Our HfS₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and high crystallinity for advanced research.

    Sample Size Options:
    Crystals larger than 10 mm²
    Crystals larger than 25 mm²

    Material Properties:
    Quasi-1D Layered Structure: Facilitates the formation of nanoribbons and thin films. Anisotropic Optical and Electronic Properties: Exhibits direction-dependent behaviors for advanced device integration.
    Semiconducting Behavior: Features a moderate bandgap suitable for optoelectronic applications.
    High Environmental Stability: Stable under inert conditions for long-term research and application.

    Crystal Structure:
    Type: Monoclinic layered structure with chain-like layers
    Features: Easily cleavable for 2D studies and thin-film fabrication.

    Degree of Exfoliation:
    Ease of Use: Readily exfoliates into thin layers or nanoribbons for advanced material studies.

    Other Characteristics:
    Optoelectronic

    Applications: High absorption and photoconductivity for photonic devices.
    Energy Storage Potential: Promising for use in batteries, supercapacitors, and catalysis.
    Anisotropic Transport: Suitable for exploring direction-dependent electronic transport phenomena.

    Applications:
    Optoelectronics:
    Ideal for photodetectors, light sensors, and other optoelectronic devices.
    2D Material Studies:
    Suitable for exfoliation into nanoribbons and thin films for van der Waals heterostructures. Energy

    Applications:
    Promising for use in hydrogen evolution reactions (HER) and energy storage systems. Quantum Materials Research:
    Enables exploration of low-dimensional and anisotropic quantum phenomena. Sensors:
    High sensitivity to light and environmental changes, ideal for advanced sensing technologies.

    Option 1

    > 10 mm², > 25 mm²