Gallium Nitride (GaN) Sputtering Target, 99.99% (4N) Purity, Circular

Gallium Nitride (GaN) Sputtering Target, 99.99% (4N) Purity, Circular

Nanostore’s Gallium Nitride (GaN) sputtering target is a high-purity compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important.

Key Features

High-Purity Source Material
Supplied at 99.99% (4N) purity for thin-film workflows that require controlled source composition and dependable deposition behavior.

Circular Target Formats
Available in circular diameters including 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm). Thickness options include 3 mm thick, depending on the selected diameter and target configuration.

Controlled Processing and Inspection
Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

Clean Handling and Packaging
Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

Mounting Configuration Note
Selected configurations for this product include mounting options such as 3 mm + 2 mm Cu backing; 3 mm + 2 mm Cu backing + magnetic shim; 3 mm + 3 mm Cu backing; 3 mm + 3 mm Cu backing + magnetic shim. Choose the plain target, Cu-backed target, and/or magnetic-shim configuration according to the sputtering source geometry and cathode requirements.

Technical Specifications

Material: Gallium Nitride (GaN)
Purity: 99.99% (4N)
Form: Circular sputtering target
Available Diameters: 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm)
Available Thicknesses: 3 mm thick
Compatible Equipment: Single-target sputtering systems, multi-target sputtering systems, ion sputtering systems, and magnetron sputtering equipment
Packaging: Protective target packaging for laboratory shipment and storage

Common Applications

– III-nitride semiconductor research; optoelectronic and LED material studies; RF and power-device thin-film development; wide-bandgap semiconductor coatings
– Academic, industrial, and pilot-scale thin-film process development