Thermal SiO₂ on undoped Si (100) Wafers

Thermal SiO₂ on Undoped Si (100) Wafers

Overview
Our thermal silicon dioxide (SiO₂) wafers are fabricated using high-temperature dry/wet thermal oxidation on undoped Si (100) substrates. Thermal oxide provides superior film density, excellent uniformity, low defect density, and outstanding electrical insulation compared to deposited oxide films.

These wafers are widely used in semiconductor research, MOS structure fabrication, dielectric studies, surface passivation research, MEMS processing, and microfabrication applications.

Available Sizes
10 × 10 × 0.5 mm
2 inch diameter × 0.5 mm
3 inch diameter × 0.5 mm
4 inch diameter × 0.5 mm
6 inch diameter × 0.625 mm

Oxide Thickness Options
100 nm
280 nm
300 nm
500 nm

Polishing & Oxide Configuration Options
Single-side Polished + Single-side Oxide
Single-side Polished + Double-side Oxide
Double-side Polished + Single-side Oxide
Double-side Polished + Double-side Oxide

Substrate Specifications
Substrate Type: Undoped Silicon
Crystal Orientation: Si (100)
Resistivity Options:
> 1000 Ω·cm
> 10,000 Ω·cm
> 20,000 Ω·cm

Thermal Oxide Characteristics
High-quality thermally grown SiO₂
Excellent dielectric strength
Low interface trap density
High thickness uniformity
Suitable for MOS and gate oxide applications

Applications
MOS capacitor structures
Semiconductor device prototyping
Dielectric breakdown studies
Surface passivation research
MEMS fabrication
Microelectronic processing
Thin film deposition platforms

Quality & Packaging
Clean-room compatible handling
Carefully packaged to prevent contamination
Research-grade wafer quality

Custom thickness and size options available upon request.