SiO₂ Alignment Cross Mark Wafer (Au Pattern on Si)

SiO₂ Alignment Cross Mark Wafer (Au Pattern on Si (100))

These alignment-mark silicon wafers feature photolithographically patterned gold cross markers fabricated on thermal silicon dioxide. The cross patterns provide precise spatial references for microscopy, microfabrication alignment, and microelectrode positioning.

The patterned surface enables accurate distance measurement and positioning in micro-scale experiments, making it suitable for lithography training, MEMS development, and electrochemical mapping.

Wafer Specifications
Diameter: 4 inch
Thickness: 500 µm
Orientation: Si (100)
Resistivity: 0.01–0.05 Ω·cm
Surface: Single-side polished

Oxide Layer
Thermal SiO₂ thickness: 300 nm

Pattern Specifications
Pattern type: Cross alignment markers
Marker length: 50 µm
Line width: 15 µm
Spacing: 300 µm
Metal layer: 100 nm Au

Fabrication Process
Photolithography → Metal deposition → Lift-off → Cleaning → Inspection

Applications
Microelectrode alignment
Microscopy positioning
Lithography calibration
MEMS device development
Microfabrication training
Electrochemical spatial mapping

Packaging
Individually packed 4-inch wafer
Cleanroom compatible packaging

Custom pattern designs available upon request.