SiO₂ Alignment Mark Wafer (Cr Number Pattern on Si)

SiO₂ Alignment Mark Wafer (Cr Number Pattern on Si (100))

These thermal silicon dioxide wafers feature precision photolithographic chromium number patterns designed for alignment, localization, and microfabrication applications.

The patterned surface provides indexed micro-scale positioning, ideal for electrochemical mapping, MEMS device development, lithography training, and microelectrode alignment.

Wafer Specifications

Diameter: 4 inch
Orientation: Si (100)
Resistivity: < 0.1 Ω·cm
Type: N-type or P-type
Surface: Single-side polished, double-side oxide

Oxide thickness options:
100 nm
300 nm
500 nm

Pattern Specifications

Base grid: 10 × 10 mm per unit
100 numeric markers per unit
Marker spacing: 900 µm
Digit size: 50 µm × 50 µm
Line width: 10 µm
Metal layer: 30 nm Chromium

Fabrication process:
Photolithography → Metal evaporation → Lift-off → Cleaning → Inspection

Applications

– Electrochemical mapping
– Microelectrode positioning
– MEMS device alignment
– Lithography training
– Microfabrication calibration
– Optical microscope reference

Packaging

Individually packed 4-inch wafer
Cleanroom compatible packaging

Custom patterns available upon request.