Showing 129–144 of 249 results
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$3,746.44
Molybdenum Disulfide (MoS₂) Film on 4-Inch Sapphire Wafer CAS Number: 1317-33-5 Substrate Size: 4-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: Monolayer or few-layer MoS₂ films are directly grown on 4-inch sapphire wafers. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance….
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$598.64
Molybdenum Ditelluride (MoTe₂) CAS Number: 12058-20-7 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Morphology Options: Few Layers (~5 layers) Multiple Layers (~10 layers) Phase Options: 2H 1T’ Substrate Options: MoTe₂ films can be directly grown on SiO₂ or sapphire substrates. Custom transfer to other substrates is available upon request;…
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$835.32
Monolayer 2H-MoTe₂ FET Device Device Structure: Conductive Si Substrate / 300 nm SiO₂ Layer / 5 µm Gold Electrode Array / Monolayer 2H-MoTe₂ Device Description & Features: Standard 2D Semiconductor: Molybdenum ditelluride (MoTe₂) in its 2H phase is a layered transition metal dichalcogenide (TMD) with a direct bandgap (~1.1 eV in monolayer form), making it…
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$556.87 – $765.70Price range: $556.87 through $765.70
MoS₂ Crystals MoS₂ is a layered transition metal dichalcogenide (TMD) with electronic, optical, and catalytic properties. It features a variable bandgap that transitions from an indirect (~1.2 eV) in bulk to a direct bandgap (~1.8 eV) in monolayer form, supporting applications in optoelectronics, nanoelectronics, and energy conversion. MoS₂ crystals are synthesized using the Chemical Vapor…
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$835.32
MoS₂ FET Device Device Structure: Conductive Si Substrate / 300 nm SiO₂ Layer / Few-layer or Multilayer MoS₂ / Au+Cr+Au Electrodes MoS₂ Layer Options: Few-layer (~5 layers) or Multilayer (~10 layers) Custom Layer Thickness Available – Please Contact Us Device Description & Features: Standard 2D Semiconductor: Molybdenum disulfide (MoS₂) is a layered transition metal dichalcogenide…
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$696.09 – $1,252.98Price range: $696.09 through $1,252.98
MoSe₂ Crystals MoSe₂ (Molybdenum Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure. It exhibits a variable bandgap, spin-orbit coupling, and electronic and optoelectronic properties, supporting applications in nanoelectronics, optoelectronics, spintronics, and 2D material research. MoSe₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method. Sample Size Options: Crystals…
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$696.09 – $1,252.98Price range: $696.09 through $1,252.98
MoSSe Crystals MoSSe is a Janus-type layered transition metal dichalcogenide (TMD) with asymmetric sulfur and selenium layers, standard to unique physical and chemical properties. Its broken out-of-plane symmetry results in a built-in dipole moment, enhancing piezoelectric, optoelectronic, and catalytic performance. MoSSe is investigated for applications in 2D materials, quantum devices, and energy conversion technologies. Our…
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$696.09
MoTe₂ Crystals MoTe₂ (1T’ phase) is a layered transition metal dichalcogenide (TMD) with electronic and topological properties. The 1T’ phase exhibits a semimetallic nature with spin-orbit coupling, supporting topological insulators, quantum spin Hall effect studies, and electronic devices. MoTe₂ (1T’) crystals are synthesized using the Chemical Vapor Transport (CVT) method. Sample Size Options: Crystals larger…
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$696.09 – $793.55Price range: $696.09 through $793.55
MoTe₂ Crystals MoTe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure, has its semiconducting 2H phase. With a variable bandgap and high electronic and optical properties, MoTe₂ is a promising material for optoelectronics, photonics, and 2D material research. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25…
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$696.09
MoVSe₄ Crystals MoVSe₄ is a layered transition metal chalcogenide with a van der Waals structure. The incorporation of vanadium into the MoSe₂ framework introduces unique electronic, optical, and catalytic properties, including enhanced magnetic and electronic behavior. This makes MoVSe₄ an high material for spintronics, quantum research, and energy-related applications. Sample Size Options: Crystals larger than…
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$974.54 – $1,252.98Price range: $974.54 through $1,252.98
MoWS₄ Crystals MoWS₄ is a layered transition metal chalcogenide alloy that combines the properties of both MoS₂ and WS₂. This mixed-metal sulfide exhibits variable electronic, optical, and catalytic properties, depending on the Mo:W ratio, supporting applications in nanoelectronics, optoelectronics, energy storage, and catalysis. MoWS₄ crystals are synthesized using the Chemical Vapor Transport (CVT) method. Sample…
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$696.09 – $1,252.98Price range: $696.09 through $1,252.98
MoWSe₄ Crystals MoWSe₄ (Molybdenum Tungsten Tetraselenide) is a layered transition metal chalcogenide alloy that combines the electronic, optical, and catalytic properties of both MoSe₂ and WSe₂. This mixed-metal selenide exhibits variable bandgap characteristics, carrier mobility, and thermal behavior, supporting applications in nanoelectronics, optoelectronics, energy storage, and catalysis. MoWSe₄ crystals are synthesized using the Chemical Vapor…
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$835.32
Multilayer Graphene Grown on Ni Foils (5 cm x 10 cm) CAS Number: 7782-42-5 Substrate Size: 5 cm x 10 cm Preparation Method: Chemical Vapor Deposition (CVD) Morphology Options: Continuous Multilayer Film Please contact us directly for specific thickness requirements. Substrate Options: Multilayer graphene films are directly grown on nickel foils. Custom transfer to other…
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$835.32
Multilayer ReS₂/PdSe₂ FET Device Device Structure: Conductive Si Substrate / 285 nm SiO₂ / Au Electrodes / Exfoliated Multilayer PdSe₂ / Exfoliated Multilayer ReS₂ Material Specifications: Multilayer PdSe₂ Multilayer ReS₂ Applications include specific thickness requirements, please contact us. Device Description & Features: Heterostructure 2D FET: The combination of PdSe₂ and ReS₂ forms a unique type-II…
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$696.09 – $1,252.98Price range: $696.09 through $1,252.98
Nb-Doped MoSe₂ Crystals Nb-doped MoSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure. Niobium doping introduces p-type conductivity, modifies the electronic band structure, and enhances the material’s optoelectronic and catalytic properties. These features make Nb-doped MoSe₂ an high candidate for spintronics, energy storage, and optoelectronic devices. Sample Size Options: Crystals…
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$696.09 – $1,392.20Price range: $696.09 through $1,392.20
Nb-Doped WSe₂ Crystals Nb-doped WSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure. Niobium doping introduces p-type conductivity and significantly modifies the electronic and optical properties of WSe₂, making it applicable to applications in optoelectronics, spintronics, and energy-related technologies. Sample Size Options: Crystals larger than 10 mm² Crystals larger than…