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Showing 209–224 of 249 results
TaCo₂Te₂ Crystals TaCo₂Te₂ is a layered transition metal telluride with a van der Waals structure, exhibiting electronic, optical, and magnetic properties. Its electrical conductivity, anisotropic behavior, and potential for topological and quantum materials research support applications in spintronics, energy storage, and low-dimensional materials science. TaCo₂Te₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method….
TaNi₂Te₂ Crystals TaNi₂Te₂ is a layered transition metal telluride with a van der Waals structure and electronic, optical, and thermoelectric properties. Its electrical conductivity, spin-orbit coupling, and potential for quantum materials research support spintronics, optoelectronics, and energy applications. TaNi₂Te₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method. Sample Size Options: Crystals larger than…
TaNi₂Te₃ Crystals TaNi₂Te₃ is a layered transition metal telluride with a van der Waals structure, exhibiting electronic, magnetic, and thermoelectric properties. Its electrical conductivity, spin-orbit coupling, and potential for quantum materials research support spintronics, optoelectronics, and energy applications. TaNi₂Te₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method. Sample Size Options: Crystals larger than…
TaS₂ (1T Phase) Crystals TaS₂ (Tantalum Disulfide, 1T phase) is a layered transition metal dichalcogenide (TMD) exhibiting electron correlation effects, charge density wave (CDW) transitions, and potential superconducting behavior. It has been investigated for its quantum electronic properties, supporting applications in condensed matter physics, nanoelectronics, and quantum devices. TaS₂ (1T phase) crystals are synthesized using…
TaSe₂ Crystals TaSe₂ (2H Phase) Crystals (Tantalum Diselenide) TaSe₂ (Tantalum Diselenide, 2H phase) is a layered transition metal dichalcogenide (TMD) with a hexagonal crystal structure. It exhibits metallic conductivity, electron correlation effects, charge density wave (CDW) transitions, and potential superconducting behavior at low temperatures. These properties support applications in nanoelectronics, superconductivity research, quantum materials, and…
TaTe₂ Crystals TaTe₂ is a layered transition metal dichalcogenide (TMD) with electronic, optical, and structural properties. It exhibits charge density wave (CDW) behavior, spin-orbit coupling, and anisotropic conductivity, supporting applications in quantum materials research, spintronics, and 2D materials studies. TaTe₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method. Sample Size Options: Crystals larger…
Te Crystals Tellurium (Te) is a semimetallic element with a trigonal crystal structure, used in electronic, optoelectronic, and thermoelectric applications. Its anisotropic properties, combined with thermal and electrical conductivity, can support use in research and industrial applications. Sample Size Options: Crystals larger than 10 mm² Material Properties: Crystal Structure: Trigonal layered structure with a helical…
Tin Diselenide (SnSe₂) CAS Number: 20770-09-6 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: SnSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request; please visit Custom Products page or contact us for assistance. Fundamental Properties: Tin diselenide (SnSe₂) is a…
Tin Disulfide (SnS₂) CAS Number: 1315-01-1 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: SnS₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance. Fundamental Properties: Tin sulfide (SnS₂) is a…
Tin Sulfide (SnS) CAS Number: 1314-95-0 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Morphology Options: Isolated Crystallites Continuous Multilayer Film For specific requirements regarding morphology or thickness, please contact us directly. Substrate Options: SnS films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon…
TiS₂ Crystals TiS₂ (Titanium Disulfide) is a layered transition metal dichalcogenide (TMD) with a hexagonal (1T) crystal structure, exhibiting metallic conductivity and electrochemical properties. It has been investigated for applications in energy storage, electronic devices, and 2D material research due to its electrical conductivity, layered structure, and chemical behavior. TiS₂ crystals are synthesized using the…
TiS₃ Crystals TiS₃ is a layered transition metal trichalcogenide (TMT) with a quasi-one-dimensional (1D) crystal structure. This unique structure endows it with pronounced anisotropic optical and electrical properties, making it an the material for applications in optoelectronics, energy storage, and specialized 2D material research. Combining high electrical conductivity with high photoconductivity, TiS₃ with broad versatility…
TiSe₂ Crystals TiSe₂ (Titanium Diselenide) is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, exhibiting metallic conductivity, charge density wave (CDW) transitions, and potential superconducting behavior at low temperatures. It is investigated in the fields of condensed matter physics, superconductivity, nanoelectronics, and energy storage due to its electronic and structural properties….
Tungsten Diselenide (WSe₂) CAS Number: 12067-46-8 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance. Fundamental Properties: Tungsten diselenide (WSe₂) is a…
Tungsten Diselenide (WSe₂) on 2-Inch Sapphire Wafer CAS Number: 12067-46-8 Substrate Size: 2-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance. Fundamental Properties: Tungsten diselenide (WSe₂)…
Tungsten Diselenide (WSe₂) on 4-Inch Sapphire Wafer CAS Number: 12067-46-8 Substrate Size: 4-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance. Fundamental Properties: Tungsten diselenide (WSe₂)…
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