MoS₂ FET Device

Device Structure:
Conductive Si Substrate / 300 nm SiO₂ Layer / Few-layer or Multilayer MoS₂ / Au+Cr+Au Electrodes

MoS₂ Layer Options:
Few-layer (~5 layers) or Multilayer (~10 layers)
Custom Layer Thickness Available – Please Contact Us

Device Description & Features:
Standard 2D Semiconductor: Molybdenum disulfide (MoS₂) is a layered transition metal dichalcogenide (TMD) with a layer-dependent bandgap (monolayer: Direct, multilayer: Indirect), making it applicable for standard electronics and optoelectronics. Back-Gated FET Configuration: The SiO₂/Si back-gate structure has high-efficiency electrostatic control, with low-power operation and high on/off current ratio. Triangular MoS₂ vs. Exfoliated MoS₂:
CVD-Grown Triangular MoS₂: With large-area uniformity for scalable device fabrication.
Mechanically Exfoliated MoS₂: Preserves intrinsic properties with minimal defects, configured carrier transport.
Metal Contact Engineering: Au+Cr+Au electrode structure with low-resistance Ohmic contacts, enhancing charge injection and carrier mobility.

Applications:
Standard Field-Effect Transistors (FETs):
MoS₂ FETs with high mobility, strong gate control, and ultrathin channels, applicable to specialized nanoelectronics. Flexible and Low-Power Electronics:
Applicable for wearable devices, transparent electronics, and flexible transistors. Optoelectronic & Photodetector Devices:
MoS₂ exhibits layer-dependent photoluminescence, making it relevant in photodetectors, LEDs, and photovoltaics. Neuromorphic & Quantum Computing:
MoS₂’s variable electronic and excitonic properties make it a potential candidate for neuromorphic computing and quantum electronics.