Showing 513–528 of 1232 results
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Price upon request
Indium (In) Pellets And Ingots, 99.995%-99.99995% Purity (Request Current Price) Nanostore Indium (In) pellets and ingots are high-purity source materials supplied for thin-film deposition research, evaporation source loading, alloy preparation, and laboratory materials development. The pellet and piece formats are convenient for weighing, loading, and small-batch experimental workflows where material identity, purity selection, and clean…
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Price upon request
Indium (In) Sputtering Target, 99.995% Purity, Circular (Price Upon Request) Nanostore’s Indium (In) sputtering target is a 99.995% purity soft post-transition metal PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable…
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Price upon request
Indium (In) Wire, 99.995%-99.9999% Purity (Request Current Price) Nanostore Indium (In) wire is a high-purity thin-film and materials-research source format supplied for PVD source loading, evaporation-related workflows, filament or wire studies, alloy preparation, and laboratory materials development. The wire and rod formats support precise cutting, weighing, fixture loading, and small-batch experimental work where material identity,…
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Price upon request
Indium Antimonide (InSb) Evaporation Pellets, 99.99% Purity (Request Current Price) Nanostore Indium Antimonide (InSb) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled…
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£310.99
Indium Antimonide (InSb) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.48 Angstrom – Density: 5.775 g/cm³ – Melting Point: 527 °C Standard Specifications: – Type/Doping: N-type – Orientation: (111) – Dimensions: dia 2 inch x 0.5 mm – Surface Finish: Double-Side Polished In face CMP
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£1,198.99
Indium Antimonide (InSb) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.48 Angstrom – Density: 5.775 g/cm³ – Melting Point: 527 °C Standard Specifications: – Type/Doping: N-type – Orientation: (111) – Dimensions: dia 2 inch x 0.5 mm – Surface Finish: Double-Side Polished In face CMP
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Price upon request
Indium Antimonide (InSb) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) Nanostore’s Indium Antimonide (InSb) sputtering target is a 99.99% purity III-V compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency,…
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£210.99
Indium Arsenide (InAs) Single Crystal Substrates, <100> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
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£210.99
Indium Arsenide (InAs) Single Crystal Substrates, <111> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density:…
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£1,071.99 – £1,437.99Price range: £1,071.99 through £1,437.99
Indium Arsenide (InAs) Single Crystal Wafers, <100> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
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£1,071.99 – £1,437.99Price range: £1,071.99 through £1,437.99
Indium Arsenide (InAs) Single Crystal Wafers, <111> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm³ Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10¹⁶ cm⁻³ – Mobility: >= 2 x 10⁴ cm²/V·s – Dislocation Density: < 3…
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£274.99 – £531.99Price range: £274.99 through £531.99
Porous Indium Foam Applications: Electrode substrate for batteries, catalyst support, thermal dissipation material, acoustic damping and shielding material, filtration media, and scientific research materials. Packaging: 200 mm x 100 mm x 2 mm sheets; 200 mm x 300 mm x 2 mm sheets. Description: This indium foam features a highly porous, open-cell metallic network with…
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£131.99
High-Purity Indium Foil Application: Indium Source Precursor, Electronic Heat Dissipation/Cooling Material, Semiconductor Applications Product Overview: This indium foil is characterized by its low melting point, low electrical resistance, corrosion resistance, and excellent thermal and electrical conductivity. It is widely utilized in the electronics and wireless communications industries. Key Specifications: Purity: > 99.99% Melting Point: 156…
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Price upon request
Indium Gallium Selenide (InGaSe) Sputtering Target, 99.99% Purity, Custom Composition, Circular (Price Upon Request) Nanostore’s Indium Gallium Selenide (InGaSe) sputtering target is a 99.99% purity, custom composition custom indium gallium chalcogenide PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch…
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Price upon request
Indium Gallium Zinc Oxide (IGZO) Sputtering Target, 99.99% Purity, In₂O₃:Ga₂O₃:ZnO = 1:1:1 mol%, Circular (Price Upon Request) Nanostore’s Indium Gallium Zinc Oxide (IGZO) sputtering target is a 99.99% purity, in2o3:ga2o3:zno = 1:1:1 mol% transparent oxide semiconductor ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target…
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Price upon request
Indium Gallium Zinc Oxide (IGZO) Sputtering Target, 99.99% Purity, In₂O₃:Ga₂O₃:ZnO = 1:1:2 mol%, Circular (Price Upon Request) Nanostore’s Indium Gallium Zinc Oxide (IGZO) sputtering target is a 99.99% purity, in2o3:ga2o3:zno = 1:1:2 mol% transparent oxide semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats…
