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Showing 17–32 of 53 results
Graphene Transferred onto Sapphire Substrate (1 cm x 1 cm) CAS Number: 7782-42-5 Substrate Size: 1 cm x 1 cm Preparation Method: Graphene film is grown on copper foils via Chemical Vapor Deposition (CVD) and transferred onto sapphire substrates using a PMMA (polymethyl methacrylate) layer and wet chemical transfer techniques. Morphology Options: Continuous Monolayer Film…
Graphene Transferred onto SiO₂ Substrate (1 cm x 1 cm) CAS Number: 7782-42-5 Substrate Size: 1 cm x 1 cm Preparation Method: Graphene film is grown on copper foils via Chemical Vapor Deposition (CVD) and transferred onto SiO₂/Si substrates with a 300 nm SiO₂ layer using a PMMA (polymethyl methacrylate) layer and wet chemical transfer…
Graphene Transferred onto SiO₂ Substrate (1 cm x 2 cm) CAS Number: 7782-42-5 Substrate Size: 1 cm x 2 cm Preparation Method: Graphene film is grown on copper foils via Chemical Vapor Deposition (CVD) and transferred onto SiO₂/Si substrates with a 300 nm SiO₂ layer using a PMMA (polymethyl methacrylate) layer and wet chemical transfer…
Graphene Transferred onto SiO₂ Substrate (2 cm x 2 cm) CAS Number: 7782-42-5 Substrate Size: 2 cm x 2 cm Preparation Method: Graphene film is grown on copper foils via Chemical Vapor Deposition (CVD) and transferred onto SiO₂/Si substrates with a 300 nm SiO₂ layer using a PMMA (polymethyl methacrylate) layer and wet chemical transfer…
Graphene-Coated Copper Wire (Per Meter) CAS Number: 7782-42-5 Product Dimensions: Available in custom lengths; price listed per meter. Preparation Method: Graphene is grown on copper wire using a Chemical Vapor Deposition (CVD) process. The uniform graphene coating enhances the wire’s conductivity and surface properties. Morphology Options: Continuous Graphene Coating For specific customization requirements regarding coating…
Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (10 cm x 10 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a Chemical Vapor Deposition (CVD) process, resulting in high-quality and uniform layers. Morphology Options: Monolayer Few Layers (<10 layers, ~5 nm) Multilayer (>5 nm) All options…
Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 10 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a Chemical Vapor Deposition (CVD) process, resulting in high-quality and uniform layers. Morphology Options: Monolayer Few Layers (<10 layers, ~5 nm) Multilayer (>5 nm) All options…
Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 5 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a Chemical Vapor Deposition (CVD) process, resulting in high-quality and uniform layers. Morphology Options: Monolayer Few Layers (<10 layers, ~5 nm) Multilayer (>5 nm) All options…
Hexagonal Boron Nitride (h-BN) Transferred onto PET Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are first grown on copper foils using a high-temperature Chemical Vapor Deposition (CVD) process. These high-quality h-BN films are then carefully transferred onto flexible PET (polyethylene terephthalate) substrates using a PMMA-assisted wet…
Hexagonal Boron Nitride (h-BN) Transferred onto Quartz Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are initially grown on copper foils using a high-temperature Chemical Vapor Deposition (CVD) process. These high-quality h-BN films are then transferred onto quartz substrates using a PMMA-assisted wet chemical transfer technique to…
Hexagonal Boron Nitride (h-BN) Transferred onto Sapphire Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a high-temperature Chemical Vapor Deposition (CVD) process. These high-quality h-BN films are then carefully transferred onto sapphire substrates using a PMMA-assisted wet chemical transfer technique, ensuring…
Hexagonal Boron Nitride (h-BN) Transferred onto SiO₂ Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are first grown on copper foils via a high-temperature Chemical Vapor Deposition (CVD) process. These high-quality h-BN films are subsequently transferred onto SiO₂/Si substrates (300 nm SiO₂ layer) using a PMMA-assisted wet…
Molybdenum Diselenide (MoSe₂) CAS Number: 12058-18-3 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: MoSe₂ films, in either monolayer or few-layer forms, are directly grown on sapphire wafers. Custom transfer to other substrates is available-please visit our Custom Products page or contact us directly for further assistance. Fundamental…
Molybdenum Diselenide (MoSe₂) on 2-Inch Sapphire Wafer CAS Number: 12058-18-3 Substrate Size: 2-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: MoSe₂ films, in either monolayer or few-layer forms, are directly grown on sapphire wafers. Custom transfer to other substrates is available-please visit our Custom Products page or contact us directly for further…
Molybdenum Disulfide (MoS₂) CAS Number: 1317-33-5 Substrate Size: 1 cm x 1 cm Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: MoS₂ films are directly grown on SiO₂/Si or sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance. Fundamental Properties: Undoped molybdenum disulfide…
Molybdenum Disulfide (MoS₂) Film on 2-Inch Sapphire Wafer CAS Number: 1317-33-5 Substrate Size: 2-Inch Sapphire Wafer Preparation Method: Chemical Vapor Deposition (CVD) Substrate Options: Monolayer or few-layer MoS₂ films are directly grown on 2-inch sapphire wafers. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance….
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