Mechanically Exfoliated ReSe₂ FET Device

Mechanically Exfoliated ReSe₂ FET Device

ReSe₂ FET (Back-Gated ReSe₂ FET)

Device Structure:
Au Electrodes / ReSe₂ / 300 nm SiO₂ / Si Back-Gated FET

ReSe₂ Layer Options:
Few-layer (~5 layers)
Multilayer (~10 layers)
For specific thickness requirements, please contact us.

Device Description & Features:
Anisotropic 2D Semiconductor: Rhenium diselenide (ReSe₂) is a layered transition metal dichalcogenide (TMD) with a triclinic crystal structure, leading to strong in-plane anisotropy in electronic and optical properties. Layer-Dependent Bandgap: Few-layer ReSe₂ has a tunable direct bandgap (~1.3 eV in monolayer form), making it ideal for optoelectronic applications. Back-Gated FET Configuration: The SiO₂/Si back-gate structure ensures efficient electrostatic control, allowing for low-power operation and high on/off ratio.
Mechanically Exfoliated Layers: Produces high-quality, intrinsic ReSe₂ films with minimal defects and superior charge transport properties.
Gold Electrodes: Forms low-resistance Ohmic contacts, enhancing charge injection efficiency.

Applications:
High-Performance Field-Effect Transistors (FETs):
Exhibits strong anisotropic electrical transport, enabling directionally tunable nanoelectronics. Flexible & Low-Power Electronics:
Ideal for wearable and flexible transistors, benefiting from ReSe₂’s mechanical flexibility. Optoelectronic & Photonic Devices:
Strong light-matter interactions and direct bandgap make it suitable for photodetectors, light emitters, and photovoltaic applications. Quantum Transport & Spintronics:
Unique layered structure and strong spin-orbit coupling allow applications in quantum computing and spintronic devices.