GeSe Crystals

Price range: £499.99 through £999.99

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    GeSe Crystals

    GeSe (Germanium Selenide) is a layered semiconductor material with an orthorhombic crystal structure. It is known for its strong anisotropic electronic and optical properties, making it a promising candidate for applications in nanoelectronics, optoelectronics, thermoelectrics, and energy storage devices. Our GeSe crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, excellent crystallinity, and uniform structural properties.

    Sample Size Options:
    Crystals larger than 10 mm²
    Crystals larger than 25 mm²
    Crystals larger than 100 mm²

    Material Properties:
    Layered Orthorhombic Structure: Enables easy exfoliation into monolayers or few-layer nanosheets for 2D materials research.
    Tunable Bandgap: Making it suitable for optoelectronic and photovoltaic applications.
    Anisotropic Transport Properties: Exhibits direction-dependent electronic and thermal conductivity, allowing for advanced device architectures.
    High Carrier Mobility: Suitable for field-effect transistors (FETs) and nanoelectronic applications.
    Strong Optical Absorption: Efficient light absorption in the visible and near-infrared range, ideal for photodetectors and solar energy conversion.
    Thermal Stability: Good thermal and chemical stability under ambient conditions.

    Crystal Structure:
    Type: Orthorhombic layered structure
    Features: High crystallinity with uniform, defect-free layers, ideal for thin-film fabrication and nanoscale device integration.

    Degree of Exfoliation:
    Ease of Use: Easily exfoliated into monolayers or few-layer nanosheets for 2D materials research and heterostructure applications.

    Other Characteristics:
    Thermoelectric Performance: Promising material for thermoelectric energy conversion due to its high Seebeck coefficient.
    Photovoltaic Efficiency: Ideal for thin-film solar cells due to its strong optical absorption.
    Flexible Electronics: Can be integrated into flexible optoelectronic and nanoelectronic devices.

    Applications:
    Optoelectronics:
    Suitable for photodetectors, infrared sensors, and photovoltaic devices. Nanoelectronics:
    High-performance material for transistors, logic devices, and flexible electronics. Thermoelectric Devices:
    Potential for thermoelectric energy conversion and waste heat recovery.
    2D Material Studies:
    Ideal for exfoliation into monolayers and integration into van der Waals heterostructures. Energy Storage:
    Potential applications in lithium-ion batteries and supercapacitors. Synthesis Method:
    Chemical Vapor Transport (CVT): Ensures high-quality crystals with excellent purity, uniform thickness, and high structural integrity.

    Option 1

    > 10 mm², > 100 mm², > 25 mm²