HfSe₂ Crystals

Price range: £499.99 through £999.99

Select an option to request a quote

Flat rate shipping £15

    HfSe₂ Crystals

    HfSe₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, known for its strong electronic, optical, and catalytic properties. As an indirect bandgap semiconductor, HfSe₂ exhibits excellent carrier mobility, strong optical absorption, and high environmental stability, making it a promising material for applications in nanoelectronics, optoelectronics, and energy storage. Our HfSe₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and superior crystallinity.

    Sample Size Options:
    Crystals larger than 10 mm²
    Crystals larger than 25 mm²
    Crystals larger than 100 mm²

    Material Properties:
    Layered van der Waals Structure: Facilitates easy exfoliation into monolayers or few-layer nanosheets for 2D material research.
    Indirect Bandgap Semiconductor: Bandgap of ~1.1 eV in bulk, tunable in few-layer forms, suitable for electronic and optoelectronic devices.
    High Carrier Mobility: Ideal for field-effect transistors (FETs) and nanoelectronic applications.
    Strong Optical Absorption: Excellent light absorption in the visible and near-infrared regions, suitable for photodetectors and solar cells. Thermal and Chemical Stability: High environmental stability, ensuring long-term performance in device applications.

    Crystal Structure:
    Type: Hexagonal layered structure (2H phase)
    Features: High crystallinity with uniform, defect-free layers, ideal for thin-film fabrication and nanoscale device applications.

    Degree of Exfoliation:
    Ease of Use: Easily exfoliated into monolayers or few-layer nanosheets for advanced materials research and heterostructure integration.

    Other Characteristics:
    High Dielectric Constant: Suitable for applications in next-generation high-κ dielectrics.
    Anisotropic Transport Properties: Direction-dependent electronic and thermal conductivity, useful for advanced device architectures.
    Energy Band Engineering: Tunable electronic properties through doping, strain, or layer thickness control.

    Applications:
    Nanoelectronics:
    High-performance material for transistors, logic devices, and flexible electronics. Optoelectronics:
    Ideal for photodetectors, light-emitting diodes (LEDs), and photovoltaic devices. Energy Storage:
    Potential applications in lithium-ion batteries, supercapacitors, and hydrogen evolution reactions (HER).
    2D Material Studies:
    Perfect for exfoliation into monolayers and integration into van der Waals heterostructures. Sensors:
    High sensitivity for gas detection, biosensing, and chemical sensing applications. Synthesis Method:
    Chemical Vapor Transport (CVT): Ensures high-quality crystals with excellent purity, uniform thickness, and high structural integrity.

    Option 1

    > 10 mm², > 100 mm², > 25 mm²