Bismuth Telluride (Bi₂Te₃)

Bismuth Telluride (Bi₂Te₃)

CAS Number: 1304-82-1

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
Bi₂Te₃ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance.

Fundamental Properties:
Bismuth telluride (Bi₂Te₃) is a layered material with a rhombohedral crystal structure. It is one of the most efficient thermoelectric materials, with high thermoelectric figure-of-merit (ZT) values at room temperature. Bi₂Te₃ also exhibits topological insulating behavior, with metallic surface states protected by time-reversal symmetry and an insulating bulk, making it a promising material for spintronics and quantum technologies. Bi₂Te₃ has a narrow bandgap of approximately 0.15 eV, excellent thermal stability, and unique electronic properties that enable applications in thermoelectrics, sensors, and advanced electronics.

Applications:
Thermoelectric Devices: Bi₂Te₃ is widely used in thermoelectric generators and coolers due to its high ZT value at room temperature.
Topological Insulators: Its surface states make it a key material for quantum computing and spintronic applications.
Electronics: Bi₂Te₃ can be utilized as a functional layer in electronic devices due to its stable electronic properties.
Sensors: Bi₂Te₃’s unique properties allow for the development of sensitive chemical and gas sensors.
Energy Harvesting: Its thermoelectric properties enable the conversion of waste heat into electrical energy.