Tin Diselenide (SnSe₂)

Tin Diselenide (SnSe₂)

CAS Number: 20770-09-6

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
SnSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance.

Fundamental Properties:
Tin diselenide (SnSe₂) is a layered transition metal dichalcogenide (TMD) with a hexagonal crystal structure. It is a semiconducting material with an indirect bandgap of approximately 1.2 eV in its bulk form and a direct bandgap in monolayer form. SnSe₂ is known for its excellent electrical, optical, and thermal properties, as well as its environmental stability and ease of exfoliation. SnSe₂’s unique electronic structure and photoresponse make it highly suitable for optoelectronic devices, while its chemical and thermal stability support applications in energy storage and sensing technologies.

Applications:
Optoelectronics: SnSe₂’s direct bandgap in monolayer form makes it ideal for photodetectors, solar cells, and light-emitting diodes (LEDs).
Electronics: Its semiconducting properties and high mobility enable applications in thin-film transistors (TFTs) and other electronic devices.
Sensors: SnSe₂-based sensors offer high sensitivity for detecting gases, chemicals, and environmental changes. Energy Applications: SnSe₂ is used as a photocatalyst for water splitting and as an electrode material in batteries and supercapacitors.
Catalysis: SnSe₂ exhibits potential for catalytic reactions due to its chemical properties and layered structure.