Rhenium Diselenide (ReSe₂)

Rhenium Diselenide (ReSe₂)

CAS Number: 12038-64-1

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
ReSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit our Custom Products page or contact us for assistance.

Fundamental Properties:
Rhenium diselenide (ReSe₂) is a layered transition metal dichalcogenide (TMD) with a distorted 1T crystal structure, similar to its sulfide counterpart, ReS₂. This structure results in weak interlayer coupling and strong in-plane anisotropy, giving ReSe₂ nearly layer-independent properties. Its indirect bandgap of approximately 1.2 eV (monolayer) and high environmental stability make it a promising material for advanced electronic and optoelectronic applications. ReSe₂ also exhibits strong anisotropic optical and electronic behavior, making it suitable for applications requiring polarization sensitivity. Its mechanical flexibility and chemical stability further enhance its utility in next-generation devices.

Applications:
Optoelectronics: ReSe₂ is ideal for photodetectors and light sensors due to its layer-independent bandgap and anisotropic optical properties.
Electronics: Its high mobility and anisotropic electronic properties make ReSe₂ a promising material for field-effect transistors (FETs).
Sensors: ReSe₂-based sensors offer excellent sensitivity and stability for gas and chemical detection. Energy Applications: ReSe₂ has potential as a catalyst for hydrogen evolution reactions (HER) and as an electrode material in energy storage devices. Photonics and Nonlinear Optics: ReSe₂’s anisotropic optical response enables its use in polarization-sensitive photonic devices.