Mechanically Exfoliated ReSe₂ FET Device

Mechanically Exfoliated ReSe₂ FET Device

ReSe₂ FET (Back-Gated ReSe₂ FET)

Device Structure:
Au Electrodes / ReSe₂ / 300 nm SiO₂ / Si Back-Gated FET

ReSe₂ Layer Options:
Few-layer (~5 layers)
Multilayer (~10 layers)
For specific thickness requirements, please contact us.

Device Description & Features:
Anisotropic 2D Semiconductor: Rhenium diselenide (ReSe₂) is a layered transition metal dichalcogenide (TMD) with a triclinic crystal structure, with in-plane anisotropy in electronic and optical properties. Layer-Dependent Bandgap: Few-layer ReSe₂ has a tunable direct bandgap (~1.3 eV in monolayer form), and it is used for optoelectronic applications. Back-Gated FET Configuration: The SiO₂/Si back-gate structure is used for electrostatic-control studies.
Mechanically Exfoliated Layers: Produces intrinsic ReSe₂ films and charge transport properties.
Gold Electrodes: Forms low-resistance Ohmic contacts, enhancing charge injection efficiency.

Applications:
Field-Effect Transistors (FETs):
Exhibits anisotropic electrical transport, enabling directionally tunable nanoelectronics. Flexible & Low-Power Electronics:
For wearable and flexible transistors, benefiting from ReSe₂’s mechanical flexibility. Optoelectronic & Photonic Devices:
light-matter interactions and direct bandgap can support use in photodetectors, light emitters, and photovoltaic applications. Quantum Transport & Spintronics:
layered structure and spin-orbit coupling allow applications in quantum computing and spintronic devices.