Mechanically Exfoliated Monolayer Graphene FET

Mechanically Exfoliated Monolayer Graphene FET

Device Structure:
Highly Doped Conductive Si Substrate / 300 nm SiO₂ Layer / Monolayer Graphene / Cr+Au Electrodes

Device Specifications:
Graphene Thickness: Monolayer
Electrode Material: Cr+Au
Gate Dielectric: 300 nm SiO₂
Applications include specific device modifications, please contact us.

Device Description & Features:
Ultra-High Carrier Mobility: Graphene exhibits ballistic transport, extremely high carrier mobility (>10,000 cm²/V-s), and a linear band structure, making it an applicable high-speed transistor material. Back-Gated FET Configuration: The SiO₂/Si back-gate structure has high-efficiency electrostatic control, permits low-power operation and high switching speeds.
Mechanically Exfoliated Monolayer Graphene: Preserves intrinsic properties, with low defect density, minimal scattering, and strong electrical performance.
Ohmic Metal Contacts: Cr+Au electrodes has low-resistance contacts, configured charge injection and transport.
Ambipolar Conductivity: Graphene permits for electron and hole conduction, making it applicable to reconfigurable electronic circuits.

Applications:
Standard Field-Effect Transistors (FETs):
Graphene FETs demonstrate ultrafast switching, high-frequency operation, and high gate tunability for specialized nanoelectronics. Flexible and Transparent Electronics:
Graphene’s mechanical flexibility and optical transparency (~97.7%) make it applicable for flexible, stretchable, and transparent electronic devices. Optoelectronic & THz

Applications:
The broadband absorption and ultrafast response of graphene permits photodetectors, optical modulators, and THz applications. Quantum Transport & Spintronics:
Graphene’s Dirac-like electronic structure permits potential applications in quantum computing, spintronics, and valleytronics.