Showing 81–96 of 249 results

  • Graphene Transferred onto SiO2 Substrate (1 cm x 2 cm)

    Graphene Transferred onto SiO₂ Substrate (1 cm x 2 cm)

    $306.27

    Graphene Transferred onto SiO₂ Substrate (1 cm x 2 cm) CAS Number: 7782-42-5 Substrate Size: 1 cm x 2 cm Preparation Method: Graphene film is grown on copper foils via Chemical Vapor Deposition (CVD) and transferred onto SiO₂/Si substrates with a 300 nm SiO₂ layer using a PMMA (polymethyl methacrylate) layer and wet chemical transfer…

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  • Graphene Transferred onto SiO2 Substrate (2 cm x 2 cm)

    Graphene Transferred onto SiO₂ Substrate (2 cm x 2 cm)

    $403.73

    Graphene Transferred onto SiO₂ Substrate (2 cm x 2 cm) CAS Number: 7782-42-5 Substrate Size: 2 cm x 2 cm Preparation Method: Graphene film is grown on copper foils via Chemical Vapor Deposition (CVD) and transferred onto SiO₂/Si substrates with a 300 nm SiO₂ layer using a PMMA (polymethyl methacrylate) layer and wet chemical transfer…

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  • Graphene-Coated Copper Wire (Per Meter)

    Graphene-Coated Copper Wire (Per Meter)

    $445.50

    Graphene-Coated Copper Wire (Per Meter) CAS Number: 7782-42-5 Product Dimensions: Available in custom lengths; price listed per meter. Preparation Method: Graphene is grown on copper wire using a Chemical Vapor Deposition (CVD) process. The graphene coating modifies the wire’s conductivity and surface properties. Morphology Options: Continuous Graphene Coating For specific configuration requirements regarding coating thickness…

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  • Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (10 cm x 10 cm)

    Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (10 cm x 10 cm)

    $1,252.98

    Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (10 cm x 10 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a Chemical Vapor Deposition (CVD) process, resulting in quality and uniform layers. Morphology Options: Monolayer Few Layers (<10 layers, ~5 nm) Multilayer (>5 nm) All options…

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  • Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 10 cm)

    Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 10 cm)

    $974.54

    Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 10 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a Chemical Vapor Deposition (CVD) process, resulting in quality and uniform layers. Morphology Options: Monolayer Few Layers (<10 layers, ~5 nm) Multilayer (>5 nm) All options…

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  • Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 5 cm)

    Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 5 cm)

    $696.09

    Hexagonal Boron Nitride (h-BN) Grown on Copper Foil (5 cm x 5 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a Chemical Vapor Deposition (CVD) process, resulting in quality and uniform layers. Morphology Options: Monolayer Few Layers (<10 layers, ~5 nm) Multilayer (>5 nm) All options…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Hexagonal Boron Nitride (h-BN) Transferred onto PET Substrate (1 cm x 1 cm)

    Hexagonal Boron Nitride (h-BN) Transferred onto PET Substrate (1 cm x 1 cm)

    $306.27

    Hexagonal Boron Nitride (h-BN) Transferred onto PET Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are first grown on copper foils using a high-temperature Chemical Vapor Deposition (CVD) process. These quality h-BN films are then carefully transferred onto flexible PET (polyethylene terephthalate) substrates using a PMMA-assisted wet…

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  • Hexagonal Boron Nitride (h-BN) Transferred onto Quartz Substrate (1 cm x 1 cm)

    Hexagonal Boron Nitride (h-BN) Transferred onto Quartz Substrate (1 cm x 1 cm)

    $306.27

    Hexagonal Boron Nitride (h-BN) Transferred onto Quartz Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are initially grown on copper foils using a high-temperature Chemical Vapor Deposition (CVD) process. These quality h-BN films are then transferred onto quartz substrates using a PMMA-assisted wet chemical transfer technique to…

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  • Hexagonal Boron Nitride (h-BN) Transferred onto Sapphire Substrate (1 cm x 1 cm)

    Hexagonal Boron Nitride (h-BN) Transferred onto Sapphire Substrate (1 cm x 1 cm)

    $306.27

    Hexagonal Boron Nitride (h-BN) Transferred onto Sapphire Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are grown on copper foils using a high-temperature Chemical Vapor Deposition (CVD) process. These h-BN films are then transferred onto sapphire substrates using a PMMA-assisted wet chemical transfer technique to produce films…

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  • Hexagonal Boron Nitride (h-BN) Transferred onto SiO2 Substrate (1 cm x 1 cm)

    Hexagonal Boron Nitride (h-BN) Transferred onto SiO₂ Substrate (1 cm x 1 cm)

    $306.27

    Hexagonal Boron Nitride (h-BN) Transferred onto SiO₂ Substrate (1 cm x 1 cm) CAS Number: 10043-11-5 Preparation Method: Hexagonal boron nitride (h-BN) films are first grown on copper foils via a high-temperature Chemical Vapor Deposition (CVD) process. These h-BN films are subsequently transferred onto SiO₂/Si substrates (300 nm SiO₂ layer) using a PMMA-assisted wet chemical…

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  • HfS2 CrystalsHfS2 Crystals – view 2

    HfS₂ Crystals

    Price range: $696.09 through $1,392.20

    HfS₂ Crystals HfS₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, has its electronic, optical, and catalytic properties. As an indirect bandgap semiconductor, it exhibits high carrier mobility, strong optical absorption, and environmental behavior, making it a promising material for nanoelectronics, optoelectronics, and energy storage applications. Our HfS₂ crystals are…

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  • HfS3 CrystalsHfS3 Crystals – view 2

    HfS₃ Crystals

    Price range: $696.09 through $793.55

    HfS₃ Crystals HfS₃ is a layered transition metal trichalcogenide (TMT) with a quasi-one-dimensional (1D) structure. It exhibits unique anisotropic electronic and optical properties, making it a promising material for optoelectronics, 2D material studies, and energy storage applications. Our HfS₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, with high purity, precise stoichiometry, and…

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  • HfSe2 CrystalsHfSe2 Crystals – view 2

    HfSe₂ Crystals

    Price range: $696.09 through $1,392.20

    HfSe₂ Crystals HfSe₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, has its strong electronic, optical, and catalytic properties. As an indirect bandgap semiconductor, HfSe₂ exhibits high carrier mobility, strong optical absorption, and high environmental behavior, making it a promising material for applications in nanoelectronics, optoelectronics, and energy storage. Our…

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  • HfTe2 CrystalsHfTe2 Crystals – view 2

    HfTe₂ Crystals

    Price range: $696.09 through $1,670.64

    HfTe₂ Crystals HfTe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure, exhibiting semimetallic behavior, strong spin-orbit coupling, and high environmental behavior. It is a promising material for quantum research, optoelectronic devices, and energy-related applications. Sample Size Options: Crystals larger than 10 mm² Crystals larger than 25 mm² Crystals larger than…

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  • HfTe5 CrystalsHfTe5 Crystals – view 2

    HfTe₅ Crystals

    Price range: $696.09 through $1,392.20

    HfTe₅ Crystals HfTe₅ is a layered transition metal pentatelluride with strong electronic, optical, and thermal properties. Its quasi-two-dimensional structure, HfTe₅ exhibits unique quantum transport phenomena, such as the chiral anomaly, and is a promising material for quantum materials research, thermoelectric applications, and optoelectronic devices. Sample Size Options: Crystals larger than 10 mm² Crystals larger than…

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  • HgPSe3 CrystalsHgPSe3 Crystals – view 2

    HgPSe₃ Crystals

    Price range: $696.09 through $793.55

    HgPSe₃ Crystals HgPSe₃ is a layered van der Waals material belonging to the family of transition metal thiophosphates. It exhibits unique semiconducting and optical properties, making it a promising material for optoelectronics, energy storage, and 2D materials research. Our HgPSe₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method to with high purity, precise…

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