LPCVD Si3N4 on Si (100) Substrates
Si₃N₄/Si

LPCVD Si₃N₄ on Si (100) Substrates

Price range: £46.99 through £138.99

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    LPCVD Si₃N₄ on Silicon Substrates (Si (100))

    Overview
    Our LPCVD silicon nitride (Si₃N₄) substrates are precision-cut from research-grade Si (100) wafers coated with high-density LPCVD silicon nitride films.

    LPCVD Si₃N₄ provides excellent film uniformity, high dielectric strength, good mechanical stability, and low defect density, making these substrates suitable for MEMS research, dielectric studies, and microfabrication experiments.

    Layer Structure
    Si₃N₄ (Silicon Nitride layer)
    Si (100) substrate

    Recommended Film Thickness
    200 nm – Standard dielectric / masking layer
    300 nm – Recommended for general microfabrication
    500 nm – Thick nitride layer for mechanical structures

    Available Sizes
    5 × 5 mm
    10 × 10 mm
    15 × 15 mm

    Substrate Specifications
    Crystal Orientation: Si (100)
    Type: N-type
    Resistivity: 1–10 Ω·cm
    Surface Finish: Single-side polished (SSP)
    Configuration: Single-side Si₃N₄ (standard)

    Deposition Process
    Low-Pressure Chemical Vapor Deposition (LPCVD)
    High film density
    Good mechanical stability
    Excellent thickness uniformity

    Applications
    MEMS device prototyping
    Hard masking layers
    Dielectric isolation research
    Mechanical membrane structures
    Photonic device platforms

    Quality & Packaging
    Research-grade wafer quality
    Clean-room compatible handling
    Carefully packaged to prevent contamination

    Custom thickness and sizes available upon request.

    Option 1

    10 × 10 mm Si | 200 nm LPCVD Si₃N₄, 10 × 10 mm Si | 300 nm LPCVD Si₃N₄, 10 × 10 mm Si | 500 nm LPCVD Si₃N₄, 15 × 15 mm Si | 200 nm LPCVD Si₃N₄, 15 × 15 mm Si | 300 nm LPCVD Si₃N₄, 5 × 5 mm Si | 200 nm LPCVD Si3N4, 5 × 5 mm Si | 300 nm LPCVD Si3N4

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