Aluminum Nitride (AlN) Film on Sapphire Wafer Template

Aluminum Nitride (AlN) Film on Sapphire Wafer Template

Application:
Designed as a high-quality template for the epitaxial growth of AlGaN-based deep UV LEDs, HEMTs, and other wide bandgap optoelectronic devices. It eliminates the complex nucleation step, improving subsequent layer quality.

Product Overview:
This product consists of a high-quality epitaxial Aluminum Nitride (AlN) thin film grown on a C-plane Sapphire substrate. It features excellent crystal quality with low dislocation density and a smooth surface, providing a lattice-matched foundation for further III-Nitride device fabrication.

Key Specifications:
– Substrate Material: Sapphire (Al₂O₃), C-plane
– AlN Epilayer Structure: Wurtzite
– Crystal Orientation: C-axis (0001) ± 0.2°
– Effective Area: > 95%
– Cracks: None
– Surface Roughness (AFM 5×5μm): Ra <= 2 nm

Crystal Quality (HRXRD FWHM):
– (0002) Peak: < 100 arcsec
– (10-12) Peak: < 350 arcsec

Geometric Parameters (By Diameter):

1. 2 inch Wafer:
– Substrate Thickness: 430 ± 15 μm
– Total Thickness Variation (TTV): <= 10 μm
– Warp: <= 20 μm
– Bow: <= 20 μm

2. 4 inch Wafer:
– Substrate Thickness: 650 ± 20 μm
– Total Thickness Variation (TTV): <= 20 μm
– Warp: <= 40 μm
– Bow: <= 40 μm

3. 6 inch Wafer:
– Substrate Thickness: 1300 ± 20 μm
– Total Thickness Variation (TTV): <= 20 μm
– Warp: <= 60 μm
– Bow: <= 60 μm

Customization & Special Requests:
– Custom AlN layer thicknesses are available upon request.
– Other substrate thicknesses can be discussed.
– For any non-standard specifications, please contact us for a quote.