Aluminum-Coated Silicon Substrates (Al/Ti on Si (100))

Aluminum-Coated Silicon Substrates (Al/Ti on Si (100))

Overview
Our aluminum-coated silicon substrates are precision-cut from research-grade Al thin film wafers fabricated on Si (100) substrates using high-vacuum magnetron sputtering.

A 10 nm titanium (Ti) adhesion layer is deposited between the silicon substrate and the aluminum film to ensure reliable interfacial bonding and stable electrical performance.

Aluminum thin films are widely used in microelectronics research, reflective coatings, MEMS fabrication, interconnect studies, and conductive layer development.

Layer Structure
Al (Aluminum layer)
Ti (10 nm adhesion layer)
Si (100) substrate

Available Sizes
5 × 5 mm
10 × 10 mm
15 × 15 mm

Recommended Aluminum Thickness
100 nm – Recommended for conductive layer applications
200 nm – Recommended for device fabrication
500 nm – Thick conductive layer for bonding or high-current applications (available for the 10 × 10 mm size only)

Substrate Specifications
Orientation: Si (100)
Doping: N-type, 1–10 Ω·cm resistivity
Surface finish: Single-side polished (SSP)

Deposition Process
High-vacuum magnetron sputtering
Controlled thickness uniformity
Precision wafer dicing
Clean-room compatible handling

Applications
Semiconductor interconnect research
MEMS device fabrication
Reflective metal layer studies
Microelectrode structures
Thin film device prototyping

Quality & Packaging
Uniform film thickness control
Research-grade surface quality
Protective packaging to minimize surface oxidation exposure

Custom sizes and thicknesses available upon request.