Aluminum Oxide (Al₂O₃) Thin Film on Si (100) Wafers

Aluminum Oxide (Al₂O₃) Thin Film on Si (100) Wafers

Overview
Our aluminum oxide (Al₂O₃) thin film wafers are fabricated on high-quality Si (100) substrates to provide uniform, high-quality dielectric and surface protection layers for research and device fabrication.

Al₂O₃ thin films offer excellent electrical insulation, chemical stability, good thermal resistance, and reliable surface passivation properties. These wafers are widely used in semiconductor research, dielectric layer studies, interface engineering, and thin film device development.

Layer Structure
Al₂O₃ (Aluminum Oxide layer)
Si (100) substrate

Recommended Film Thickness
20 nm – Most popular thickness
50 nm – General dielectric applications
100 nm – Thick insulating layer

Substrate Specifications
Crystal Orientation: Si (100)
Type: N-type
Resistivity: 1–10 Ω·cm
Wafer Thickness: 500–525 µm
Surface Finish: Single-side polished (SSP)

Configuration
Single-side polished + Single-side Al₂O₃ (standard)

Double-side coating available upon request.

Film Characteristics
Good thickness uniformity
Stable dielectric performance
High chemical resistance
Low defect density
Research-grade surface quality

Applications
High-k dielectric research
Surface passivation
MOS capacitor structures
Gate dielectric studies
Interface engineering research
Protective and barrier layer applications
Thin film device prototyping

Quality & Packaging
Clean-room compatible handling
Carefully packaged to prevent contamination
Research-grade wafer quality

Custom thickness and wafer sizes available upon request.