Aluminum Scandium Nitride (AlScN) Film on Silicon Wafer Template

Aluminum Scandium Nitride (AlScN) Film on Silicon Wafer Template

Application:
Serves as the optimal substrate material for 5G RF front-end SAW/BAW filters, MEMS piezoelectric sensors, as well as various high-power and high-frequency electronic devices.

Product Overview:
This product features a high-quality Aluminum Scandium Nitride (AlScN) thin film deposited on a Silicon (100) single crystal substrate. Available in 4, 6, and 8-inch diameters, it combines the mature ecosystem of silicon substrates with the high electromechanical coupling coefficient of AlScN, making it a key material for next-generation communication technologies.

Key Specifications:
– Substrate Material: Silicon Single Crystal (Si)
– Substrate Orientation: (100)
– Doping Type: N-type/Ph
– Film Material: Aluminum Scandium Nitride (AlScN)
– Sc Concentration: 40 ± 5 at%
– Standard AlScN Thickness: 800 nm
– Crystal Orientation: C-axis (0001) ± 0.2°
– Effective Area: > 95%
– Cracks: None

Crystal Quality & Surface:
– HRXRD FWHM @ (0002): <= 2.0°
– Surface Roughness (Ra, 5×5μm): <= 5 nm

Geometric Parameters (By Diameter):

1. 4 inch Wafer:
– Substrate Thickness: 525 ± 20 μm
– Total Thickness Variation (TTV): <= 10 μm
– Warp: <= 25 μm
– Bow: <= 25 μm

2. 6 inch Wafer:
– Substrate Thickness: 625 ± 15 μm
– Total Thickness Variation (TTV): <= 5 μm
– Warp: <= 40 μm
– Bow: <= 40 μm

3. 8 inch Wafer:
– Substrate Thickness: 725 ± 15 μm
– Total Thickness Variation (TTV): <= 4 μm
– Warp: <= 40 μm
– Bow: <= 40 μm

Customization & Special Requests:
– Custom Sc concentrations and film thicknesses are available.
– For any non-standard specifications, please contact us for a quote.