Gallium Nitride (GaN) Single Crystal Substrates, ⟨0001⟩
GaN

Gallium Nitride (GaN) Single Crystal Substrates, ⟨0001⟩

Price range: £550.99 through £838.99

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    Gallium Nitride (GaN) Single Crystal Substrate

    Physical Properties:
    – Crystal Structure: Hexagonal System
    – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom
    – Preparation Method: HVPE

    Standard Specifications:
    – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15°
    – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm
    – Secondary Flat: (11-20) ± 3.0° / 8 ± 1 mm
    – Dimensions: 5 x 5 x 0.4 mm, 10 x 10 x 0.4mm
    – Surface Finish: Single-Side Polished / Double-Side Polished
    – Surface Roughness: Ra: < 0.5 nm – Effective Area: > 90%

    Electrical Specifications by Type:
    1. N-type/undoped:
    – Resistivity: < 0.1 ohm-cm

    2. N-type/Si-doped:
    – Resistivity: < 0.05 ohm-cm 3. Semi-Insulating/Fe-doped: – Resistivity: > 1 x 10⁶ ohm-cm

    4. Semi-Insulating/C-doped:
    – Resistivity: > 1 x 10⁸ ohm-cm

    Option 1

    10 × 10 × 0.4 mm, N-type (Si-doped), Double-Side Polished, 10 × 10 × 0.4 mm, N-type (Si-doped), Single-Side Polished, 10 × 10 × 0.4 mm, N-type (undoped), Double-Side Polished, 10 × 10 × 0.4 mm, N-type (undoped), Single-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (C-doped), Double-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (C-doped), Single-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (Fe-doped), Double-Side Polished, 10 × 10 × 0.4 mm, Semi-Insulating (Fe-doped), Single-Side Polished, 5 × 5 × 0.4 mm, N-type (Si-doped), Double-Side Polished, 5 × 5 × 0.4 mm, N-type (Si-doped), Single-Side Polished, 5 × 5 × 0.4 mm, N-type (undoped), Double-Side Polished, 5 × 5 × 0.4 mm, N-type (undoped), Single-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (C-doped), Double-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (C-doped), Single-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (Fe-doped), Double-Side Polished, 5 × 5 × 0.4 mm, Semi-Insulating (Fe-doped), Single-Side Polished

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