Gallium Arsenide (GaAs) Single Crystal Substrates

Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / Semi-Insulating

Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: a=5.6534 Angstrom
– Melting Point: 1237 °C

Standard Specifications (by Type):

Type 1: N-type / Si-doped
– Growth Method: VGF
– Orientation: (100) off (111) 15°±0.5°
– Primary Flat: (0-1-1) ± 0.5° / 16 ± 2 mm
– Secondary Flat: (0-11) ± 0.5° / 7 ± 1 mm
– Dimensions: 10 x 10 x 0.35 mm
– Surface Finish: Single-Side Polished
– Resistivity: (0.4~9) x 10⁻³ ohm-cm
– Carrier Concentration: (5~40) x 10¹⁷ cm⁻³
– Dislocation Density (EPD): <= 5000 cm⁻² – Mobility: > 1500 cm²/V·s
– Total Thickness Variation (TTV): < 15 µm
– Bow: < 10 µm
– Warp: < 10 µm

Type 3: Semi-Insulating
– Growth Method: VGF
– Orientation: (100) ± 0.5°
– Primary Flat: (00-1) ± 0.5° / 32 ± 2 mm
– Secondary Flat: (0-11) ± 0.5° / 18 ± 1 mm
– Dimensions: 10 x 10 x 0.6 mm
– Surface Finish: Double-Side Polished
– Resistivity: > 1 x 10⁷ ohm-cm
– Dislocation Density (EPD): < 6000 cm⁻² – Mobility: > 5000 cm²/V·s
– Total Thickness Variation (TTV): < 15 µm
– Bow: < 10 µm
– Warp: < 10 µm