Tin Disulfide (SnS₂)

Tin Disulfide (SnS₂)

CAS Number: 1315-01-1

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
SnS₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Tin sulfide (SnS₂) is a layered transition metal dichalcogenide (TMD) with a hexagonal crystal structure. It exhibits semiconducting behavior with an indirect bandgap of approximately 2.1 eV in its bulk form, while monolayers display a direct bandgap, supporting the use of SnS₂ in optoelectronic and photovoltaic applications. SnS₂ has environmental stability, and its fabrication and abundance are noted material characteristics. Its layered structure supports exfoliation and integration into nanoscale devices, and its photoresponse supports use in sensing and light-harvesting technologies.

Applications:
Optoelectronics: The direct bandgap of monolayer SnS₂ supports use in photodetectors, solar cells, and LEDs.
Electronics: SnS₂ is a material for thin-film transistors (TFTs) due to its semiconducting properties and mechanical flexibility.
Sensors: SnS₂-based devices have sensitivity and selectivity for gas and chemical sensing. Energy Applications: SnS₂ is used as a photocatalyst for water splitting and as an electrode material for batteries and supercapacitors.
Catalysis: Its layered structure and chemical properties make SnS₂ a catalyst candidate for multiple chemical reactions.