Tin Sulfide (SnS)

Tin Sulfide (SnS)

CAS Number: 1314-95-0

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Morphology Options:
Isolated Crystallites
Continuous Multilayer Film
For specific requirements regarding morphology or thickness, please contact us directly.

Substrate Options:
SnS films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Tin sulfide (SnS) is a layered material with an orthorhombic crystal structure and is a p-type semiconductor. It has a direct bandgap of approximately 1.3 eV in monolayer form and an indirect bandgap of about 1.1 eV in bulk, and it is used for optoelectronic and photovoltaic applications. SnS has an absorption coefficient, environmental stability, and abundance that support energy-related applications. Its layered structure supports integration into nanoscale devices.

Applications:
Optoelectronics: The direct bandgap of SnS supports use in photodetectors, LEDs, and solar cells.
Electronics: SnS is used for field-effect transistors (FETs) and other thin-film electronic devices due to its semiconducting properties.
Sensors: SnS-based devices demonstrate sensitivity for gas and chemical sensing. Energy Applications: SnS is studied for its use in solar cells and as an electrode material in batteries and supercapacitors.
Photocatalysis: The optical properties of SnS support its use in photocatalytic applications, including water splitting.