Tungsten Diselenide (WSe₂) on 4-Inch Sapphire Wafer

Tungsten Diselenide (WSe₂) on 4-Inch Sapphire Wafer

CAS Number: 12067-46-8

Substrate Size: 4-Inch Sapphire Wafer

Preparation Method: Chemical Vapor Deposition (CVD)

Substrate Options:
WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request-please visit the Custom Products page or contact us for assistance.

Fundamental Properties:
Tungsten diselenide (WSe₂) is a two-dimensional transition metal dichalcogenide (TMD) with layered structure and in-plane covalent bonding. In its monolayer form, WSe₂ exhibits a direct bandgap of approximately 1.65 eV, supporting light-harvesting and emission applications. In bulk form, WSe₂ has an indirect bandgap of about 1.2 eV. The bandgap energy decreases as the number of layers increases, transitioning from direct to indirect. WSe₂ demonstrates spin-valley coupling effects and photoluminescence, enabling its use in optoelectronics and quantum technologies. Its environmental stability and carrier mobility support its use in electronic and optoelectronic devices.

Applications:
Optoelectronics: WSe₂ is used in photodetectors, solar cells, and light-emitting devices due to its direct bandgap and light-matter interaction in the monolayer form.
Microelectronics: Its carrier mobility and on/off ratios support WSe₂ use for field-effect transistors (FETs).
Quantum Technologies: The spin-valley coupling properties of WSe₂ support its application in quantum computing and valleytronic devices. Energy Applications: WSe₂ is explored as a material for hydrogen evolution reactions (HER) and other catalytic processes due to its tunable electronic properties.
Sensors: WSe₂-based sensors exhibit sensitivity and selectivity for detecting gases, chemicals, and biomolecules.